Jpn. J. Appl. Phys. 31 (1992) pp. 2446-2451  |Next Article|  |Table of Contents|
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High-Efficiency InGaAlP Visible Light-Emitting Diodes

Hideto Sugawara, Kazuhiko Itaya, Masayuki Ishikawa and Gen-ichi Hatakoshi

(Received December 13, 1991; accepted for publication June 20, 1992)

A new structure for InGaAlP light-emitting diodes (LEDs) which include a GaAlAs current-spreading layer has been designed. Remarkable improvements in external efficiency have been achieved using this structure. The photoluminescence and electroluminescence characteristics of high-Al-content InGaAlP alloys have been investigated. A GaAs substrate with an intentional surface misorientation from the nominally (100) plane towards the [011] direction was found to have a marked effect on the improvement of emission properties. The external quantum efficiency was 1.2% at 592 nm for an In_0.5(Ga_0.7Al_0.3)_0.5P active layer LED. These LEDs have been operated for more than 1500 hours at 80°C and 50 mA.

URL: http://jjap.jsap.jp/link?JJAP/31/2446/
DOI: 10.1143/JJAP.31.2446

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