Jpn. J. Appl. Phys. 31 (1992) pp. 2925-2930  |Next Article|  |Table of Contents|
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Reaction Mechanism of Chemical Vapor Deposition Using Tetraethylorthosilicate and Ozone at Atmospheric Pressure

Takaaki Kawahara, Akimasa Yuuki and Yasuji Matsui

(Received April 22, 1992; accepted for publication July 18, 1992)

The decomposition process of tetraethylorthosilicate (TEOS) and ozone at atmospheric pressure was measured in a closed vessel by in-situ Fourier-transform infrared absorption (FT-IR) analysis, and the changes of the deposition rate and the overall sticking probability β of the film precursor were obtained along the flow direction in a flow-type reactor. It has been found that the film precursors are formed by TEOS decomposition with O-atoms and/or ozone in the gas phase, and that CH₃CHO may be the first product, followed by the oxidation to CO₂ and H₂O via HCHO. It is also shown that the film quality changes along the flow direction, that is, O-H bonds in the film decrease and the β-value increases as the reaction proceeds. These results may show that there are several kinds of precursors, and the sticky (unstable) precursors become dominant in the later stages.

URL: http://jjap.jsap.jp/link?JJAP/31/2925/
DOI: 10.1143/JJAP.31.2925

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