Jpn. J. Appl. Phys. 31 (1992) pp. 4508-4514  |Next Article|  |Table of Contents|
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Quantum Wire Fabrication by E-Beam Elithography Using High-Resolution and High-Sensitivity E-Beam Resist ZEP-520

Toshio Nishida, Masaya Notomi, Ryuzo Iga and Toshiaki Tamamura

NTT Opto-electronics Laboratories, 3-1 Morinosato-Wakamiya, Atugi 243-01

(Received July 7, 1992; accepted for publication August 15, 1992)

We have evaluated the resolution of the positive electron-beam (E-beam) resist ZEP-520 using finely focused E-beam exposure for the application of quantum wire fabrication in a large area. Compared with the poly-methylmethacrylate (PMMA) resist conventionally used for nanofabrication, ZEP resist shows almost the same resolution under sensitivity improvement of one order of magnitude, and the throughput is increased by a factor of more than 100 by introducing a highly bright Zr/O/W thermal field emitter as an E-beam source. Other excellent performance characteristics, such as high dry-etching durability and process stability, allow us to apply ZEP resist for larger-area, high-density quantum wire fabrication. By both wet chemical etching and dry-etching combined with CBE selective growth, InGaAs nanostructures as small as 15 nm can be obtained with a pitch of 70 nm over several hundred µm squares.

URL: http://jjap.jsap.jp/link?JJAP/31/4508/
DOI: 10.1143/JJAP.31.4508
KEYWORDS:electron beam lithography, quantum wire, resist, compound semiconductor, chemical etching, selective growth, nanometer lithography, InGaAs


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