Jpn. J. Appl. Phys. 32 (1993) pp. 1033-1038 |Next Article| |Table of Contents|
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A Positron Lifetime Study of Defects in Neutron-Irradiated Si
Anli Li,
Hanchen Huang,
Donghong Li,
Shengnan Zheng,
Hongshan Du,
Shengyun Zhu and
Tadao Iwata1
China Institute of Atomic Energy, P.O. Box 275, Beijing 102413, People's Republic of China
1Department of Physics, Japan Atomic Energy Research Institute, Tokai-mura, Naka-gun, Ibaraki 319-11
(Received October 8, 1992; accepted for publication January 23, 1993)
Positron lifetime measurements in neutron-irradiated Cz silicon crystals have been performed at room temperature after annealing at different temperatures between 100°C and 800°C. Two-component fitting of the positron lifetime spectra was carried out. It is suggested that the short lifetime component is a weighted average lifetime of the positrons in the bulk and those trapped at monovacancy-substitutional oxygen complexes, while the long lifetime component is an average lifetime of the positrons trapped at divacancies or divacancy-substitutional oxygen complexes and those trapped at quadrivacancy-substitutional oxygen complexes. The two-component data are analyzed using an extension of the trapping model to obtain the positron trapping rates at these vacancy-type defects. The annealing of these defects is discussed.
URL:
http://jjap.jsap.jp/link?JJAP/32/1033/
DOI: 10.1143/JJAP.32.1033
KEYWORDS:silicon, lattice defects, vacancy-oxygen complexes, positron lifetime, neutron irradiation, annealing
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