Jpn. J. Appl. Phys. 32 (1993) pp. 1033-1038  |Table of Contents|
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A Positron Lifetime Study of Defects in Neutron-Irradiated Si

Anli Li, Hanchen Huang, Donghong Li, Shengnan Zheng, Hongshan Du, Shengyun Zhu and Tadao Iwata

Articles citing this article

The list of citing articles is based on data provided by CrossRef Cited-by Linking. Any errors or omissions are the responsibility of the primary publisher.

  1. Journal of Applied Physics 85 (1999) 8074
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  2. Physica B Condensed Matter 273-274 (1999) 312
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  3. Journal of Applied Physics 81 (1997) 1645
    Origin of infrared bands in neutron-irradiated silicon
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  4. Physical Review B 53 (1996) 6900
    Precursor defect to the vacancy-dioxygen center in Si
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  5. Journal of Nuclear Materials 212-215 (1994) 293
    Damage structures of silicon irradiated heavily with neutrons
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  6. Physical Review B 50 (1994) 11531
    Interpretation of infrared data in neutron-irradiated silicon
    C. Londos, G. Georgiou, L. Fytros, and K. Papastergiou


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