Jpn. J. Appl. Phys. 32 (1993) pp. 1045-1050  |Next Article|  |Table of Contents|
|Full Text PDF (1137K)| |Buy This Article|

Step-Controlled Epitaxial Growth of 4H-SiC and Doping of Ga as a Blue Luminescent Center

Tsunenobu Kimoto, Atsushi Yamashita, Akira Itoh and Hiroyuki Matsunami

(Received October 15, 1992; accepted for publication December 19, 1992)

Homoepitaxial growth of 4H-SiC could be achieved at 1500°C on off-oriented 4H-SiC{0001} substrates by means of a vapor phase epitaxial method. Grown layers showed specular smooth surfaces on both (0001)Si and (0001)C faces. Doping of Ga during crystal growth was carried out and photoluminescence of grown layers was studied. Bluish-violet photoluminescence due to donor(N)-acceptor(Ga) pair recombination and recombination of a free electron with a hole at a Ga acceptor was observed. The emission attributed to the latter recombination process became dominant at high temperatures above 100 K. The luminescence of Ga-doped 4H-SiC was not quenched up to temperatures as high as 150 K, whereas the luminescence intensity of Al-doped 6H-SiC and 4H-SiC started to decrease at 70 and 85 K, respectively.

URL: http://jjap.jsap.jp/link?JJAP/32/1045/
DOI: 10.1143/JJAP.32.1045

References | Citing Articles (8)

1. Polymorphism and Polytypism in Crystals, eds. A. R. Verma and P. Krishna (John Wiley & Sons, Inc., New York, 1966).
   
2. W. J. Choyke and L. Patrick: Phys. Rev. 127 (1962) 1868[APS].
   
3. R. W. Brander and R. P. Sutton: Br. J. Appl. Phys. 2 (1969) 309.
   
4. W. von Muench, W. Kuerzinger and I. Pfaffeneder: Solid-State Electron. 19 (1976) 871.
   
5. M. Ikeda, T. Hayakawa, S. Yamagiwa, H. Matsunami and T. Tanaka: J. Appl. Phys. 50 (1979) 8215[AIP Scitation].
   
6. S. Nishino, A. Ibaraki, H. Matsunami and T. Tanaka: Jpn. J. Appl. Phys. 19 (1980) L353[JSAP].
   
7. K. Koga, T. Nakata and T. Niina: Ext. Abstr. 17th Conf. Solid State Devices and Materials, Tokyo (Business Center for Academic Societies Japan, Tokyo, 1985) p. 253.
   
8. Y. Matsushita, T. Nakata, T. Uetani, T. Yamaguchi and T. Niina: Jpn. J. Appl. Phys. 29 (1990) L343[JSAP].
   
9. A. Suzuki, Y. Fujii, H. Saito, Y. Tajima, K. Furukawa and S. Nakajima: J. Cryst. Growth 115 (1991) 623.
   
10. L. Patrick, W. J. Choyke and D. R. Hamilton: Phys. Rev. 137 (1965) A1515[APS].
    
11. W. J. Choyke, L. Patrick and D. R. Hamilton: Proc. 7th Conf. Physics of Semiconductors Paris, Paris (1964) p. 751.
    
12. I. S. Gorban', V. A. Gubanov and V. M. Efimov: Sov. Phys.-Solid State 14 (1973) 2010.
    
13. S. H. Hagen, A. W. C. van Kemenade and J. A. W. van der Does de Bye: J. Lumin. 8 (1973) 18.
    
14. A. Suzuki, H. Matsunami and T. Tanaka: J. Phys. Chem. Solids 38 (1977) 693.
    
15. M. Ikeda, H. Matsunami and T. Tanaka: Phys. Rev. B 22 (1980) 2842[APS].
    
16. W. F. Knippenberg: Philips Res. Rep. 18 (1963) 161.
    
17. V. A. Dmitriev, L. M. Kogan, Ya. V. Morozenko, B. V. Tsarenkov, V. E. Chelnokov and A. E. Cherenkov: Sov. Phys. Semicond. 23 (1989) 23.
    
18. T. Nakata, Y. Matsushita, K. Koga, Y. Ueda, T. Uetani, Y. Fujikawa, T. Yamaguchi and T. Niina: Shinku 32 (1989) 797 [in Japanese].
    
19. N. Kuroda, K. Shibahara, W. S. Yoo, S. Nishino and H. Matsunami: Ext. Abstr. 19th Conf. Solid State Devices and Materials, Tokyo (Business Center for Academic Societies Japan, Tokyo, 1987) p. 227.
    
20. H. S. Kong, J. T. Glass and R. F. Davis: J. Appl. Phys. 64 (1988) 2672[AIP Scitation].
    
21. T. Ueda, H. Nishino and H. Matsunami: J. Cryst. Growth 104 (1990) 695[CrossRef].
    
22. Y. C. Wang and R. F. Davis: J. Electron. Mater. 20 (1991) 869.
    
23. T. Kimoto, H. Nishino, W. S. Yoo and H. Matsunami: J. Appl. Phys. 73 (1993) 726[AIP Scitation].
    
24. K. Koga, T. Nakata, Y. Ueda, T. Yamaguchi, Y. Fujikawa, T. Uetani and T. Niina: Ext. Abstr. Electrochem. Soc. Fall Meeting, Hollywood, Florida (Electrochemical Society, Pennington, 1989) No. 472, p. 698.
    
25. W. von Muench and I. Pfaffeneder: J. Electrochem. Soc. 122 (1975) 642.
    
26. T. Ueda, H. Nishino and H. Matsunami: unpublished.
    
27. W. J. Choyke and L. Patrick: Phys. Rev. 172 (1968) 769[APS].
    
28. K. Colbow: Phys. Rev. 141 (1966) 742[APS].
    
29. J. S. Blakemore: Phys. Rev. 163 (1967) 809[APS].
    
30. G. B. Dubrovskii and V. I. Sankin: Sov. Phys.-Solid State 17 (1975) 1847.