Jpn. J. Appl. Phys. 32 (1993) pp. 1227-1228 |Next Article| |Table of Contents|
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Crystal Structure of TiN Film Fabricated by Reactive Sputtering on Si(100) Substrate
Masahiko Tsuchida,
Tsukasa Kuroda,
Hiroaki Iwakuro1 and
Takashi Shimizu2
Institute of Scientific and Industrial Research, Osaka University, Ibaraki, Osaka 567
1Research and Development Department, Shindengen Electric Manufacturing Co., Ltd.,
10-13 Minamicho, Hanno, Saitama 357
2Total Technical Supervision Department of Electronic Devices, Shindengen Electric Manufacturing Co., Ltd.,
10-13 Minamicho, Hanno, Saitama 357
(Received September 29, 1992; revised manuscript revised November 26, 1992; accepted for publication December 19, 1992)
The crystal structure of TiN film fabricated on a Si(100) surface by reactive sputtering was studied by means of X-ray diffraction. When the N2 flow rate was less than 0.058, hexagonal Ti was deposited. The [001] axis of Ti was normal to the substrate face. When the N2 flow rate was more than 0.091, cubic TiN was deposited. The [111] axis of TiN was normal to the substrate face.
URL:
http://jjap.jsap.jp/link?JJAP/32/1227/
DOI: 10.1143/JJAP.32.1227
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