Jpn. J. Appl. Phys. 32 (1993) pp. 1308-1311  |Next Article|  |Table of Contents|
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Dot Structures Fabricated by Laser Etching -Laser Wavelength Dependence of Dot Structures Fabricated by Laser Etching-

Mizunori Ezaki¹, Hiroshi Kumagai, Koichi Toyoda and Minoru Obara¹

(Received July 7, 1992; accepted for publication December 19, 1992)

Submicron periodic dot structures on semiconductor substrates (n-InP, n-GaAs) were fabricated directly with the one-step laser-photochemical dry etching of n-InP and n-GaAs using a holographic exposure system. We employed a new etching technique which makes use of laser-induced surface electromagnetic waves (SEW) in the etching gas/semiconductor interface. The size of dot structures on n-InP was about 105 nm for the frequency-tripled Nd:YAG laser and 80 nm for the frequency-quadrupled Nd:YAG laser. Thus, the size of dot structures depended upon the incident laser wavelength.

URL: http://jjap.jsap.jp/link?JJAP/32/1308/
DOI: 10.1143/JJAP.32.1308

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