Jpn. J. Appl. Phys. 32 (1993) pp. 4043-4047  |Next Article|  |Table of Contents|
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Preparation of Ba₂NaNb₅O₁₅ Film by RF Magnetron Sputtering Method

Yoichiro Masuda, Hiroshi Masumoto¹, Akira Baba, Takashi Goto¹ and Toshio Hirai¹

(Received May 21, 1993; accepted for publication July 17, 1993)

A film with tungsten-bronze structure was formed on a Pt/Al₂O₃ substrate by a RF msagnetron sputtering method. The deposition ratio of the films (Ba:Na:Nb) depended on the sputtering gas pressure. When the deposition rates were 10 nm/min at 10^-1 Pa and 5 nm/min at 8 Pa, the dielectric constant and the dielectric loss factor were 141 and 0.02 at room temperature, respectively, and the remanent polarization P_r and the coercive field E_c were 32 µC/cm² and 576 V/mm, respectively.

URL: http://jjap.jsap.jp/link?JJAP/32/4043/
DOI: 10.1143/JJAP.32.4043

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