Jpn. J. Appl. Phys. 32 (1993) pp. 4074-4077  |Next Article|  |Table of Contents|
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Thin Film Growth of Pb(Zr, Ti)O₃ by Photoenhanced Metalorganic Chemical Vapor Deposition Using NO₂

Masaru Shimizu, Takuma Katayama, Masataka Sugiyama and Tadashi Shiosaki

(Received May 24, 1993; accepted for publication August 21, 1993)

Ferroelectric Pb(Zr, Ti)O₃ thin films were successfully grown by photoenhanced metalorganic chemical vapor deposition (photo-MOCVD), using Pb(C₂H₅)₄, Zr(O-t-C₄H₉)₄, Ti(O-i-C₃H₇)₄ and NO₂. Both tetragonal and rhombohedral Pb(Zr, Ti)O₃ thin films were obtained at substrate temperatures higher than 535°C. Significant effects of photoirradiation on the growth behavior were observed. The observed effects included an increase in the growth rate and film compositional ratio of Zr/(Zr+Ti), and a change in the electrical properties. A decrease in the growth temperature of the Pb(Zr, Ti)O₃ films caused by photoirradiation was observed only when the films were grown at low gas supply ratios of [Zr]/([Zr]+[Ti]). The photodeposited Pb(Zr, Ti)O₃ films obtained showed good ferroelectric properties, good leakage characteristic and good step coverage.

URL: http://jjap.jsap.jp/link?JJAP/32/4074/
DOI: 10.1143/JJAP.32.4074

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