Jpn. J. Appl. Phys. 32 (1993) pp. L1562-L1564  |Next Article|  |Table of Contents|
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Scaling Analysis of Chemical-Vapor-Deposited Tungsten Films by Atomic Force Microscopy

Tatsuo Yoshinobu and Hiroshi Iwasaki

The Institute of Scientific and Industrial Research, Osaka University, 8-1 Mihogaoka, Ibaraki, Osaka 567

(Received June 28, 1993; accepted for publication September 18, 1993)

We have studied the static surface roughness of 500-nm-thick tungsten chemical-vapor-deposited polycrystalline films on length scales between 5 and 5×104 nm, using atomic force microscopy. The interface width scales as a power of the system size for small system sizes (<1000 nm) but is constant for large sizes, which is in agreement with nonequilibrium interface growth theory. The scaling exponent (0.75±0.05) for short-length scales appears to be consistent with the recent prediction based on a conservative volume growth model. In the long-range regime, the rms value becomes larger as the substrate temperature is lowered.

DOI: 10.1143/JJAP.32.L1562
KEYWORDS:interface roughness, nonequilibrium growth, scaling, self-affine, chemical vapor deposition, tungsten, atomic force microscopy, experiment

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References | Citing Articles (8)

  1. T. Vicsek: Fractal Growth Phenomena (World Scientific, Singapore, 1989).
  2. M. Kardar, G. Parisi and Y. C. Zhang: Phys. Rev. Lett. 56 (1986) 889[APS].
  3. M. Eden: Proc. 4th Berkeley Symp. Mathematical Statistics and Probability, Vol. 4: Biology and Problems of Health, ed. F. Neyman (Berkeley, University of California Press, 1961) pp. 223-239.
  4. M. Kardar and Y. C. Zhang: Phys. Rev. Lett. 58 (1987) 2087[APS].
  5. A. J. McKane and M. A. Moore: Phys. Rev. Lett. 60 (1988) 527[APS].
  6. D. E. Wolf and J. Kertesz: Europhys. Lett. 4 (1987) 651.
  7. J. M. Kim and J. M. Kosterlitz: Phys. Rev. Lett. 62 (1989) 2289[APS].
  8. J. Krug and H. Spohn: Solids Far From Equilibrium: Growth, Morphology and Defects, ed. C. Godriche (Cambridge University Press, Cambridge, 1990) pp. 479-582.
  9. H. Yan, D: Kessler and L. M. Sander: Phys. Rev. Lett. 64 (1990) 926[APS].
  10. J. Villain: J. Phys. I (France) 1 (1991) 19.
  11. Y.-L. He, H.-N. Yang, T.-M. Lu and G.-C. Wang: Phys. Rev. Lett. 69 (1992) 3770[APS].
  12. H. Iwasaki and T. Yoshinobu: to be published in Phys. Rev. B.
  13. J. A. M. Ammerlaan, P. J. van der Put and J. Schoonman: J. Appl. Phys. 73 (1993) 4631[AIP Scitation].
  14. N. Kobayashi, Y. Nakamura, H. Goto and Y. Homma: J. Appl. Phys. 73 (1993) 4637[AIP Scitation].
  15. R. Arora and R. Pollard: J. Electrochem. Soc. 138 (1991) 1523.
  16. P.-Z. Wong, J. Howard and J.-S. Lin: Phys. Rev. Lett. 57 (1986) 637[APS].
  17. P.-Z. Wong: Phys. Rev. B32 (1985) 7417[APS].
  18. T. Sugiyama and K. Yano: private communication.
  19. J. Feder: Fractals (Plenum, New York, 1988).

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