Jpn. J. Appl. Phys. 32 (1993) pp. L1728-L1731 |Next Article| |Table of Contents|
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Extremely Flat Interfaces in GaAs/AlGaAs Quantum Wells Grown on GaAs (411)A Substrates by Molecular Beam Epitaxy
1 Faculty of Engineering Science, Osaka University, Toyonaka, Osaka 560
2 Research and Development Division, Nissin Electric Co., Ltd., Umezu-Takase-cho, Ukyo-ku, Kyoto 615
3 Research and Headquarters Kubota Corporation, Amagasaki, Hyogo 661
4 Faculty of Science, Kwansei Gakuin University, Nishinomiya, Hyogo 662
5 Faculty of Science, Osaka University, Toyonaka, Osaka 560
6 Research Center for Extreme Materials, Osaka University, Toyonaka, Osaka 560
(Received June 14, 1993; accepted for publication October 16, 1993)
GaAs/Al0.3Ga0.7As quantum wells (QWs) grown on (411)A-oriented GaAs substrates by molecular beam epitaxy (MBE) showed extremely flat interfaces over a macroscopic area (about 200 µm φ) even for the case of no growth interruption, which is mainly due to the intrinsically large migration of Ga atoms and layer growth in the step-flow mode on the (411)A plane. Photoluminescence linewidths at 4.2K were almost the same as or better than the narrowest linewidths reported for GaAs/AlGaAs and GaAs/AlAs QWs grown on GaAs (100) substrates with growth interruption at each GaAs/AlGaAs(AlAs) interface. Only one sharp luminescence peak was observed for each QW on the (411)A substrates, in contrast with three luminescence peaks for the QWs on the (100) substrates, indicating that extremely flat and uniform interfaces over a macroscopic area of laser excitation (200 µm diameter) are realized in the GaAs/AlGaAs QWs grown on (411)A GaAs substrates.
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- The migration lengths of Ga atoms on (411)A (λ(411)A) and (100) surfaces (λ(100)) were deduced from the cross-sectional SEM observation of the MBE-grown GaAs layer (\Ts = 590 °C, V/III = 30 (pressure ratio)) on (100) channeled substrates with (755)A side slopes by the present authors (unpublished). A (411)A facet appeared between the (755)A side slope and (100) plane. During the growth, Ga atoms diffused from the (411)A facet to the (100) plane, which resulted in a convex surface in the (411)A region and a concave surface in the (100) region. The thicknesses of GaAs varied as A1+B1 exp (-x/λ(100)) and A2+B2 exp (-x/λ(411)A) for the (411)A and (100) regions, respectively, where x is the distance from the edge between the (411)A and (100) planes, and A1, B1, A2 and B2 are constants. By fitting these curves to the experimental data, we obtained λ(411) = 1.0 µ m and λ(100) = 0.25 µm.