Jpn. J. Appl. Phys. 32 (1993) pp. L981-L983 |Next Article| |Table of Contents|
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A Novel Post-Hydrogenation Process for Chemical-Vapor-Deposited a-Si Thin-Film Transistors
Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, Tokyo 152
(Received January 9, 1993; accepted for publication May 15, 1993)
A novel post-hydrogenation method for chemical-vapor-deposited amorphous-silicon (CVD a-Si) thin-film transistors (TFTs) has been proposed. Samples were annealed in the presence of the atomic hydrogen generated by a hot tungsten filament. The dependence of the amount of adsorbed hydrogen on annealing period, filament temperature and total gas pressure was described. A-Si TFTs which were post-hydrogenated by means of the hot-filament method showed an electron mobility of 1.1 cm2/V·s. The lifetime and diffusion length of atomic hydrogen were estimated.
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