Jpn. J. Appl. Phys. 33 (1994) pp. 1472-1477  |Next Article|  |Table of Contents|
|Full Text PDF (1171K)| |Buy This Article|

Roles of Buffer Layers in Epitaxial Growth of SrTiO₃ Films on Silicon Substrates

Bum Ki Moon and Hiroshi Ishiwara

(Received August 19, 1993; accepted for publication December 18, 1993)

Heteroepitaxial growth of SrTiO₃ (STO) films with and without buffer layers on Si(100) and (111) substrates has been conducted by a focused electron beam evaporation method. It has been found that thin metallic layers such as Ti and Sr are effective for improving the quality of overgrown STO films, which is probably due to the fact that the metallic layers deoxidize the surface SiO₂ layers on Si substrates. It has also been found that a Sr buffer layer is effective for obtaining fairly good epitaxial films on both Si(100) and (111) substrates, while a Ti buffer layer is effective for obtaining good electrical properties of the film and interface.

URL: http://jjap.jsap.jp/link?JJAP/33/1472/
DOI: 10.1143/JJAP.33.1472

References | Citing Articles (46)

1. R. O. Bell and G. Rupprecht: Phys. Rev. 129 (1963) 90[APS].
   
2. T. Sakuma, S. Yamamichi, S. Matsubara, H. Yamaguchi and Y. Miyasaka: Appl. Phys. Lett. 57 (1990) 2431[AIP Scitation].
   
3. Y. Miyasaka and S. Matsubara: Proc. 7th Int. Symp. Applications of Ferroelectrics, Illinois, 1990 (IEEE, New York, 1991) p. 121.
   
4. O. N. Tufte and P. W. Chapman: Phys. Rev. 155 (1967) 796[APS].
   
5. M. Ihara, Y. Arimoto, M. Jifuku, T. Kimura, S. Kodama, H. Yamawaki and T. Yamaoka: J. Electrochem. Soc. 129 (1982) 2569.
   
6. H. Fukumoto, T. Imura, Y. Osaka and F. Nishiyama: J. Appl. Phys. 66 (1989) 616[AIP Scitation].
   
7. Y. Kado and Y. Arita: Ext. Abstr. 20th Int. Conf. Solid State Devices and Materials, Tokyo, 1988 (Business Center for Academic Societies Japan, Tokyo, 1988) p. 181.
   
8. T. Inoue, Y. Yamamoto, S. Koyama, S. Suzuki and Y. Ueda: Appl. Phys. Lett. 56 (1990) 1332[AIP Scitation].
   
9. H. Mori and H. Ishiwara: Jpn. J. Appl. Phys. 30 (1991) L1415[JSAP].
   
10. H. Ishiwara, N. Tsuji, H. Mori and H. Nohira: Appl. Phys. Lett. 61 (1992) 1459[AIP Scitation].
    
11. Y. Kado and Y. Arita: J. Appl. Phys. 61 (1987) 2398[AIP Scitation].