Jpn. J. Appl. Phys. 33 (1994) pp. 1759-1766 |Next Article| |Table of Contents|
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Modulation Molecular Beam Epitaxy under Constant Low As Pressure
Takashi Suzuki and
Tatau Nishinaga
Department of Electronic Engineering, Faculty of Engineering, The University of Tokyo,
7-3-1 Hongo, Bunkyo-ku, Tokyo 113
(Received April 2, 1993; accepted for publication January 22, 1994)
A new method of molecular beam epitaxy for III–V compounds called modulation molecular beam epitaxy (M-MBE) is proposed. In this method, group III flux modulated in pulse is introduced under a continuous supply of low-pressure As4 flux. This causes a persistent and periodic change of the surface reconstruction and associated intensity oscillation of reflection high-energy electron diffraction. The growth mechanism in this method is discussed in detail for homo- and heteroepitaxy. The optical property of the AlAs-GaAs single quantum well (SQW) structure is investigated to evaluate a heterointerface grown by this method. SQWs grown at 300° C show a good characteristic almost equal to those grown at high temperature by the conventional MBE method with growth interruptions. In contrast, SQWs grown at 580° C have rather poor characteristics.
URL:
http://jjap.jsap.jp/link?JJAP/33/1759/
DOI: 10.1143/JJAP.33.1759
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