Jpn. J. Appl. Phys. 33 (1994) pp. 1823-1830 |Next Article| |Table of Contents|
|Full Text PDF (1563K)| |Buy This Article|
Novel Approach to Evaluation of Charging on Semiconductor Surface by Noncontact, Electrode-Free Capacitance/Voltage Measurement
Development Department 2, Dainippon Screen Manufacturing Co., Ltd., 322 Furukawa-cho, Hazukashi, Fushimi-ku, Kyoto 612
(Received November 8, 1993; accepted for publication January 22, 1994)
This paper describes a novel approach to the quantitative characterization of semiconductor surface charging caused by plasma exposures and ion implantations. The problems in conventional evaluation of charging are also discussed. Following the discussions above, the necessity of unified criteria is suggested for efficient development of systems or processes without charging damage. Hence, the charging saturation voltage between a top oxide surface and substrate, V s, and the charging density per unit area per second, ρ0, should be taken as criteria of charging behavior, which effectively represent the charging characteristics of both processes. The unified criteria can be obtained from the exposure time dependence of a net charging density on the thick field oxide. In order to determine V s and ρ0, the analysis using the C-V curve measured in a noncontact method with the metal-air-insulator-semiconductor (MAIS) technique is employed. The total space-charge density in oxide and its centroid can be determined at the same time by analyzing the flat-band voltage (V fb) of the MAIS capacitor as a function of the air gap. The net charge density can be obtained by analyzing the difference between the total space-charge density in oxide before and after charging. Finally, it is shown that charge damage of the large area metal-oxide-semiconductor (MOS) capacitor can be estimated from both V s and ρ0 which are obtained from results for a thick field oxide implanted with As+ and exposed to oxygen plasma.
- S. B. Felch, V. K. Basra and C. M. McKenna: IEEE Trans. Electron Devices 35 (1988) 2338.
- V. K. Basra, C. M. McKenna and S. B. Felch: Nucl. Instrum. & Methods B 21 (1987) 360.
- K. Tunokuni, K. Nojiri, S. Kuboshima and K. Hirobe: Ext. Abstr. 19th Conf. Solid State Devices and Materials (1987) p. 195.
- F. Shone, K. Wu, J. Shaw, E. Hokelek, S. Mittal and A. Haranahalli: 1989 Int. Symp. VLSI in Japan (1989) p. 73.
- Y. Kawamoto: Proc. 7th Symp. Dry Process (1985) p. 132.
- A. M. McCarthy and W. Lukaszek: Proc. IEEE 1989 Int. Conf. Microelectronics Test Structures, Edinburgh, (1989) Vol. 2, p. 153.
- S. Fang, A. M. McCarthy and J. P. McVittie: Proc. 3rd Int. Symp. ULSI, Electrochem. Soc. (1991) p. 473.
- S. Fang and J. P. McVittie: IEEE Electron Device Lett. 13 (1992) 347.
- S. Fang and J. P. McVittie:
J. Appl. Phys. 72 (1992) 4865[AIP Scitation].
- E. O. Johnson and L. Malter:
Phys. Rev. 80 (1950) 58[APS].
- G. Sixt, M. Schulz and A. Goetzberger: Appl. Phys. 4 (1974) 217.
- D. J. DiMaria, D. R. Young, R. F. Dekeersmaecker, W. R. Hunter and C. M. Serrano:
J. Appl. Phys. 49 (1978) 5441[AIP Scitation].
- T. Sakai, M. Kohno, S. Hirae, I. Nakatani and T. Kusuda:
Jpn. J. Appl. Phys. 32 (1993) 4005[JSAP].
- E. N. Nicollian and J. R. Brews: MOS Physics and Technology (John Wiley & Sons, New York, 1982) 2nd ed., Chap. 10, p. 426.
- B. E. Deal, M. Sklar, A. S. Grove and E. H. Snow: J. Electrochem. Soc. 114 (1967) 266.