Jpn. J. Appl. Phys. 33 (1994) pp. 1954-1958  |Next Article|  |Table of Contents|
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Electron Paramagnetic Resonance Studies of Defects in CdIn₂S₄ Single Crystals

Takeo Takizawa, Eric Christoffel¹, Alfred Goltzené¹ and Claude Schwab¹

(Received December 27, 1993; accepted for publication February 19, 1994)

Defect centers in CdIn₂S₄ single crystals have been investigated using 9 GHz electron paramagnetic resonance (EPR). Experiments have been performed over the 4.2 to 100 K temperature range on both as-grown and electron-irradiated samples in the dark and under illumination with band-gap energy light ( λ= 530 nm). Before illumination, most as-grown samples show only weak signals. During illumination, two symmetric, isotropic lines are observed: S1 at g = 2.019±0.003 and S2 at g = 1.660±0.003 each with a linewidth (ΔH) of about 300 G. From the similar thermal decay and photoquenching characteristics, S1 and S2 are considered to arise from an acceptor and a shallow donor, respectively. Electron irradiation (1.8 MeV) induces two new lines in the dark. At low doses S3 with g = 1.766±0.001 and ΔH = 75 G is observed, while SF2 with g = 1.665±0.001 and ΔH = 15 is observed at high doses. The broad S2 disappears and the narrow SF2 appears with increasing electron doses. SF2 is then associated with Fermi-level modification by irradiation-induced donors.

URL: http://jjap.jsap.jp/link?JJAP/33/1954/
DOI: 10.1143/JJAP.33.1954

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