Jpn. J. Appl. Phys. 33 (1994) pp. 2008-2014 |Next Article| |Table of Contents|
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Characteristics of Chlorine-Doped ZnSe Films and ZnSe–ZnS Superlattices Grown by Hot Wall Epitaxy
Shingo Sakakibara1,
Kouki Fujimoto,
Noriyasu Amano,
Kenei Ishino,
Akihiro Ishida and
Hiroshi Fujiyasu
Department of Electronics, Faculty of Engineering, Shizuoka University, 3-5-1 Johoku, Hamamatu 432
1Graduate School of Electronic Science and Technology, Shizuoka University, 3-5-1 Johoku, Hamamatu 432
(Received September 13, 1993; accepted for publication February 19, 1994)
Chlorine-doped (Cl-doped) n-type ZnSe films were prepared on GaAs(100) substrates by hot wall epitaxy (HWE) using ZnCl2 as a doping source. The electron concentration could be controlled from 8.4×1014 cm-3 to 2.8×1019 cm-3 by varying the ZnCl2 temperature. ZnSe films with an electron concentration above 1019 cm-3, having a donor-bound excitonic photoluminescence emission (I2) without deep level emission were obtained for the first time. The activation energy of the chlorine donor was estimated to be 26.7 meV from the photon energy of I2. The existence of Cl in the films was confirmed by SIMS. Moreover, the Cl-doped ZnSe–ZnS superlattices with high electron concentration on the order of 1017 cm-3 and excitonic PL emissions associated with the free exciton, were obtained for the first time.
URL:
http://jjap.jsap.jp/link?JJAP/33/2008/
DOI: 10.1143/JJAP.33.2008
- T. Tao: J. Cryst. Growth 72 (1985) 31.
- R. M. Park, H. A. Mar and N. M. Salansky:
J. Vac. Sci. & Technol. B 3 (1985) 1637[AIP Scitation].
- W. Stutius:
Appl. Phys. Lett. 38 (1981) 352[AIP Scitation].
- S. Fujita, Y. Matsuda and A. Sasaki: J. Cryst. Growth 68 (1984) 231.
- A. Yoshikawa, S. Muto, S. Yamaga and H. Kasai:
Jpn. J. Appl. Phys. 27 (1988) L260[JSAP].
- J. E. Potts, H. Cheng, J. M. Depuydt and M. A. Hasse: J. Cryst. Growth 101 (1990) 425.
- T. Yao and Y. Okada:
Jpn. J. Appl. Phys. 25 (1986) 821[JSAP].
- R. N. Bhargava: J. Cryst. Growth 59 (1982) 15.
- M. A. Hasse, J. Qiu, J. M. Depuydt and H. Cheng:
Appl. Phys. Lett. 59 (1991) 1272[AIP Scitation].
- K. Ohkawa, T. Karasawa and T. Mitsuyu:
Jpn. J. Appl. Phys. 30 (1991) L152[JSAP].
- S. Sakakibara, N. Amano, K. Ishino, A. Ishida and H. Fujiyasu:
Jpn. J. Appl. Phys. 32 (1993) 4703[JSAP].
- H. Fujiyasu and I. Ishida: Oyo Buturi 61 (1992) 1241 [in Japanese].
- J. Lilja, M. Toivonen, M. Hovinen and M. Pessa: Mater. Lett. 9 (1990) 396.
- T. Matsumoto, T. Iijima and H. Goto: J. Cryst. Growth 99 (1990) 427.
- K. Ohkawa, T. Mitsuyu and O. Yamazaki:
J. Appl. Phys. 62 (1987) 3216[AIP Scitation].
- Z. Zhu, K. Takebayashi and T. Yao:
Jpn. J. Appl. Phys. 32 (1993) 415[JSAP].
- K. P. Giapis, D. C. Lu and K. F. Jensen: J. Cryst. Growth 104 (1990) 291.
- S. Hayashi, A. Tsujimura, S. Yoshii, K. Ohkawa and T. Mitsuyu:
Jpn. J. Appl. Phys. 30 (1992) L1478[JSAP].
- H. Fujiyasu, K. Mochizuki, Y. Yamazaki, M. Aoki and A. Sasaki: Surf. Sci. 174 (1986) 543.
- T. Yokogawa, M. Ogura and T. Kajiwara:
Appl. Phys. Lett. 49 (1986) 1702[AIP Scitation].
- A. Taike, N. Teraguchi and M. Konagai:
Jpn. J. Appl. Phys. 26 (1987) L989[JSAP].
- A. Akimoto, T. Miyajima and Y. Mori:
Jpn. J. Appl. Phys. 28 (1989) L531[JSAP].
- M. Migita, A. Taike, M. Shiiki and H. Yamamoto: J. Cryst. Growth 101 (1990) 835.
- A. Taike, M. Migita and H. Yamamoto:
Appl. Phys. Lett. 56 (1990) 1989[AIP Scitation].
- K. M. Lee, L. S. Dang and G. D. Watkins: Solid State Commun. 35 (1980) 527.
- E. Hanamura: J. Phys. Soc. Jpn. 28 (1970) 120.
- H. Kukimoto, S. Shinoya, S. Toyotomi and K. Morigaki: J. Phys. Soc. Jpn. 28 (1970) 110.
- G. Hitier: Thesis Paris VI (1980).
- R. R. Sharma and S. Rodrigues:
Phys. Rev. 159 (1967) 647[APS].
- G. E. Hite, D. T. F. Marple, M. Aven and B. Segall:
Phys. Rev. 156 (1967) 850[APS].
- S. Tarucha, H. Okamoto, Y. Iwasa and N. Miura:
Solid State Commun. 52 (1984) 815[CrossRef].
- H. Kuwabara, H. Fujiyasu, H. Shimizu, A. Sasaki and S. Yamada:
J. Cryst. Growth 72 (1985) 299[CrossRef].
