Jpn. J. Appl. Phys. 33 (1994) pp. 3791-3802  |Next Article|  |Table of Contents|
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Molecular Beam Epitaxy of Silicon-Based Heterostructure and Its Application to Novel Devices*

Masanobu Miyao and Kiyokazu Nakagawa

Central Research Laboratory, Hitachi, Ltd., Kokubunji, Tokyo 185

(Received November 27, 1993; accepted for publication April 16, 1994)

Recent progress in Si heterostructure engineering is reviewed from physical and technological viewpoints. Advanced methods to fabricate atomic layer doping structures, Si on insulator structures, and strain controlled double heterostructures, i.e. Si/SiGe/Si and Si/silicide/Si using molecular beam epitaxy, are developed. Detailed characterization provides a comprehensive understanding of the physical phenomena behind these new crystal growth techniques. Application of these advanced methods to novel device fabrication is also discussed.

URL: http://jjap.jsap.jp/link?JJAP/33/3791/
DOI: 10.1143/JJAP.33.3791
KEYWORDS:Si molecular beam epitaxy, impurity doping, surface segregation, atomic layer doping, solid phase epitaxy, Si on insulator, Si/SiGe heterostructure, Si/silicide heterostructure, strain control, permeable base transistor, modulation doped field effect transistor


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