Jpn. J. Appl. Phys. 33 (1994) pp. 4298-4302  |Next Article|  |Table of Contents|
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CF₃, CF₂ and CF Radical Measurements in RF CHF₃ Etching Plasma Using Infrared Diode Laser Absorption Spectroscopy

Koji Maruyama, Katsunori Ohkouchi¹, Yasunori Ohtsu² and Toshio Goto

(Received January 19, 1994; accepted for publication April 16, 1994)

We have measured the characteristics of CF₃, CF₂ and CF radical densities in RF CHF₃ etching plasma under the same condition using infrared diode laser absorption spectroscopy, for the first time. The CF _x radical density measurements have been performed as a function of input RF power, CHF₃ gas pressure and distance from the RF electrode. On the basis of these systematic measurements, the generation and loss processes of CF _x radicals in RF CHF₃ plasma were discussed.

URL: http://jjap.jsap.jp/link?JJAP/33/4298/
DOI: 10.1143/JJAP.33.4298

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