Jpn. J. Appl. Phys. 33 (1994) pp. 440-443 |Next Article| |Table of Contents|
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Single Crystalline Si Metal/Oxide/Semiconductor Field-Effect Transistors Using High-Quality Gate SiO2 Deposited at 300°C by Remote Plasma Technique
Takashi Fuyuki,
Tohru Oka and
Hiroyuki Matsunami
Department of Electrical Engineering, Kyoto University, Sakyo, Kyoto 606-01
(Received September 9, 1993; accepted for publication November 20, 1993)
High-quality gate SiO2 for metal/oxide/semiconductor field-effect transistors (MOSFETs) could be deposited at as low as 300° C in remote plasma chemical vapor deposition (CVD) utilizing activated neutral oxygen species and SiH4. The interface between deposited SiO2 and Si was improved with the formation of thin SiO2 by low-temperature oxidation using activated neutral oxygen species just before film deposition. The resistivity and breakdown field were as high as 1016 Ω ·cm and 10 MV/cm, respectively, equivalent to those of thermal SiO2 grown at high temperatures. The achieved minimum interface state density was as low as 4×1010 cm-2 eV-1. Fabricated MOSFETs using single crystalline Si showed excellent performance, and an effective channel mobility of 135 cm2 V-1 s-1 for holes was obtained.
URL:
http://jjap.jsap.jp/link?JJAP/33/440/
DOI: 10.1143/JJAP.33.440
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