Jpn. J. Appl. Phys. 33 (1994) pp. 5167-5171 |Next Article| |Table of Contents|
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Control of Orientation of Pb(Zr, Ti)O3 Thin Films Using PbTiO3 Buffer Layer
Department of Electronics, Faculty of Engineering, Kyoto University, Yoshida Honmachi, Sakyo-ku, Kyoto 606
(Received June 6, 1994; accepted for publication July 16, 1994)
The orientation of Pb(Zr, Ti)O3 (PZT) thin films grown by metalorganic chemical vapor deposition (MOCVD) using a two-step growth process was controlled by changing the orientation of the PbTiO3 buffer layer. The (111)-oriented and (100)-oriented PZT films were grown on the (111)-oriented and the (001) and (100) mixed-oriented PbTiO3 buffer layers, respectively. From the atomic force microscope (AFM) observations, it was found that in the initial growth stages of the (111)-oriented PbTiO3 layer, the main growth mechanism was two-dimensional growth. In the two-step growth process, the PbTiO3 buffer layer played the important role of providing dense nuclei in the succeeding growth of rhombohedral PZT thin films. The influence of the thickness of a buffer layer on the relative dielectric constants of PZT films was also investigated.
KEYWORDS:orientation, PZT, PbTiO3, buffer layer, two step growth process, MOCVD, AFM
- M. Shimizu, M. Fujimoto, T. Katayama, T. Shiosaki, K. Nakaya, M. Fukagawa and E. Tanikawa: Mater. Res. Soc. Symp. Proc. 310 (1993) 255.
- K. Kashihara, T. Okudaira, H. Itoh, T. Higaki and H. Abe: Ext. Abstr. 53rd Autumn Meet. the Japan Society of Applied Physics, Suita, September, 1992, 16-p-ZV-13 [in Japanese].
- K. Kashihara, T. Okudaira, H. Itoh, T. Higaki and H. Abe: 1993 Symp. VLSI Technology Dig. of Tech. Pap. 4B-4 (1993) p. 49.
- K. Kashihara, T. Okudaira, H. Itoh and H. Abe: Semicond. World 10 (1993) 28 [in Japanese].
- I. Kanno, S. Hayashi, T. Kamada, M. Kitagawa and T. Hirao:
Jpn. J. Appl. Phys. 32 (1993) 4057[JSAP].
- M. Shimizu, M. Sugiyama, H. Fujisawa, T. Hamano, T. Shiosaki and K. Matsushige: to be published in J. Cryst. Growth.
- F. K. Lotgerling: J. Inorg. Chem. 9 (1959) 113.