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Jpn. J. Appl. Phys. 33 (1994) pp. 5167-5171  |Next Article|  |Table of Contents|
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Control of Orientation of Pb(Zr, Ti)O3 Thin Films Using PbTiO3 Buffer Layer

Masaru Shimizu, Masataka Sugiyama, Hironori Fujisawa and Tadashi Shiosaki

Department of Electronics, Faculty of Engineering, Kyoto University, Yoshida Honmachi, Sakyo-ku, Kyoto 606

(Received June 6, 1994; accepted for publication July 16, 1994)

The orientation of Pb(Zr, Ti)O3 (PZT) thin films grown by metalorganic chemical vapor deposition (MOCVD) using a two-step growth process was controlled by changing the orientation of the PbTiO3 buffer layer. The (111)-oriented and (100)-oriented PZT films were grown on the (111)-oriented and the (001) and (100) mixed-oriented PbTiO3 buffer layers, respectively. From the atomic force microscope (AFM) observations, it was found that in the initial growth stages of the (111)-oriented PbTiO3 layer, the main growth mechanism was two-dimensional growth. In the two-step growth process, the PbTiO3 buffer layer played the important role of providing dense nuclei in the succeeding growth of rhombohedral PZT thin films. The influence of the thickness of a buffer layer on the relative dielectric constants of PZT films was also investigated.

URL: http://jjap.jsap.jp/link?JJAP/33/5167/
DOI: 10.1143/JJAP.33.5167
KEYWORDS:orientation, PZT, PbTiO3, buffer layer, two step growth process, MOCVD, AFM


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References | Citing Articles (57)

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  7. F. K. Lotgerling: J. Inorg. Chem. 9 (1959) 113.
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