Jpn. J. Appl. Phys. 33 (1994) pp. 5207-5210  |Next Article|  |Table of Contents|
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Preparation of Pb(Zr,Ti)O₃ Thin Films on Ir and IrO₂ Electrodes

Takashi Nakamura, Yuichi Nakao, Akira Kamisawa and Hidemi Takasu

(Received May 20, 1994; accepted for publication July 16, 1994)

Pb(Zr _xTi_{1- x})O₃ (PZT) thin films were prepared on Ir and IrO₂ electrodes. Ir has very similar properties to Pt, and IrO₂ is a conductive oxide. Perovskite single-phase PZT thin films were obtained on their electrodes. PZT thin films were grown by the conventional sol-gel method with rapid thermal annealing (RTA) at 700° C. When Pt thin films were deposited directly on poly-Si, PtSi layers were formed, and PZT thin films on the Pt had very poor crystallinity. When an IrO₂ layer was formed between PZT and poly-Si, a high-quality PZT thin film was obtained. Moreover, when electrodes including the IrO₂ layer were used, fatigue properties of PZT thin films were drastically improved.

URL: http://jjap.jsap.jp/link?JJAP/33/5207/
DOI: 10.1143/JJAP.33.5207

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