Jpn. J. Appl. Phys. 33 (1994) pp. L1796-L1798  |Next Article|  |Table of Contents|
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Isolated Nanometer-Size Si Dot Arrays Fabricated Using Electron-Beam Lithography, Reactive Ion Etching, and Wet Etching in NH₄OH/H₂O₂/H₂O

Anri Nakajima, Hajime Aoyama and Kazuo Kawamura

(Received June 27, 1994; accepted for publication November 7, 1994)

A simple technique for fabricating an array of isolated nanometer-size Si dots is reported. The processing procedures consist of electron beam lithography and reactive ion etching followed by wet etching in NH₄OH/H₂O₂/H₂O. The resulting array has isolated crystalline Si dots, each 10 nm in diameter and 10 nm high. To our knowledge, these are the smallest isolated crystalline Si dots reported to date.

URL: http://jjap.jsap.jp/link?JJAP/33/L1796/
DOI: 10.1143/JJAP.33.L1796

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