Jpn. J. Appl. Phys. 34 (1995) pp. 3153-3158  |Next Article|  |Table of Contents|
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Ferroelectric and Dielectric Characteristics of (Pb1-yLay)[Mg(x+2y)/3Nb(2x+y)/3Ti1-x-y]O3 Thin Films Prepared by RF Magnetron Sputtering

Ming-Chrong Jiang, Tai-Bor Wu, Jenn-Ming Wu

Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan, R.O.C.

(Received January 10, 1995; accepted for publication March 18, 1995)

Ferroelectric thin films having compositions of xPb(Mg1/3Nb2/3)O3+(1- x- y)PbTiO3+ yLa(Mg2/3Nb1/3)O3 (PLMNT) with x=0.37-0.78 and y=0.03-0.13 were prepared on Pt/Ti/SiO2/Si substrates by rf magnetron sputtering deposition at 520° C. Pure perovskite films were obtained for all compositions. The 0.5-µ m-thick films having a constant La(Mg2/3Nb1/3)O3 content of y=0.03 showed a ferroelectric-hysteresis characteristic with the remanent polarization and coercive field decreased from 8.5 µ C/cm2 and 46 kV/cm to 4.2 µ C/cm2 and 29 kV/cm, respectively, for changing the composition from x=0.645 to 0.78. Dielectric constant (k) of 1200-1300 and dielectric loss (tan δ) less than 0.04 were also measured at 1 kHz. The temperature of dielectric peak decreased to near room temperature for an increase of Pb(Mg1/3Nb2/3)O3 content to x=0.78, which corresponded to a composition at the rhombohedral/cubic phase boundary of the PLMNT system. For films having composition lying along this phase boundary but containing La(Mg2/3Nb1/3)O3\geqslant7 mol%, the dielectric peak became much more broadened (flattened), which provided a good dielectric stability against variation of temperature. Good dielectric stability against frequency up to 1 MHz was also observed. The films also showed weak ferroelectric-hysteresis characteristic.

DOI: 10.1143/JJAP.34.3153
KEYWORDS:ferroelectric films, (Pb1-yLay)[Mg(x+2y)/3Nb(2x+y)/3Ti1-x-y]O3, sputtering deposition

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