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Jpn. J. Appl. Phys. 34 (1995) pp. 3418-3425  |Next Article|  |Table of Contents|
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Hydrogen-like Ultrashallow Thermal Donors in Silicon Crystals

Akito Hara

Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi 243-01, Japan

(Received November 19, 1994; accepted for publication April 6, 1995)

I investigated the electrical properties of annealed carbon- and nitrogen-rich Czochralski-grown silicon crystals using optical absorption and electron spin resonance, and I discovered the formation of a new kind of hydrogen-like donors, ultrashallow thermal donors (USTDs), made up of carbon, nitrogen and oxygen, and having very shallow energy levels. The donors' central-cell corrections are very small, with some of them having a negative central-cell correction peculiar to large cluster size defects. Based on the similarities between nitrogen-oxygen donors (D(N, O)s) and USTDs, I propose a formation mechanism and an atomic configuration for the USTDs. The USTDs are defects caused by interstitial carbons diffusing into the core of D(N, O) and modifying its electronic structure.

URL: http://jjap.jsap.jp/link?JJAP/34/3418/
DOI: 10.1143/JJAP.34.3418


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