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Jpn. J. Appl. Phys. 34 (1995) pp. 5077-5082  |Next Article|  |Table of Contents|
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Surface Morphologies and Electrical Properties of (Ba, Sr)TiO3 Films Prepared by Two-Step Deposition of Liquid Source Chemical Vapor Deposition

Takaaki Kawahara, Mikio Yamamuka, Akimasa Yuuki, Kouichi Ono

Semiconductor Research Laboratory, Mitsubishi Electric Corporation, 8-1-1 Tsukaguchi-Honmachi Amagasaki, Hyogo 661, Japan

(Received May 23, 1995; accepted for publication June 19, 1995)

Protrusions of (Ba, Sr)TiO3 (BST) crystallites were found to appear on BST film surfaces prepared by liquid source chemical vapor deposition (CVD) at a substrate temperature T s=420° C and a reactor pressure P=1.5 Torr. Such protrusions were successfully suppressed by two-step deposition, where BST films consisted of a buffer layer and a main layer; the buffer layer was a CVD-BST film about 60 Å thick annealed in N2 ambient. By this two-step deposition on Pt electrodes, the BST film properties of equivalent SiO2 thickness t eq=0.56 nm, leakage current J L=1.2×10-8 A/cm2 at +1.1 V and dielectric loss tan δ=0.011 were achieved at a total film thickness of 230 Å, along with a coverage of 80% at a trench of aspect ratio 0.65 and sufficiently low absorption current.

URL: http://jjap.jsap.jp/link?JJAP/34/5077/
DOI: 10.1143/JJAP.34.5077
KEYWORDS:DRAM, capacitor, BST, liquid source CVD, step coverage, two-step deposition, leakage current, absorption current


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