Quick Search: Journal  Author  Title/Abstract  Vol./Year 

Jpn. J. Appl. Phys. 34 (1995) pp. 5124-5131  |Next Article|  |Table of Contents|
|Full Text PDF (1576K)| |Buy This Article|

Optical Properties of Ba2NaNb5O15 Film Fabricated by RF Magnetron Sputtering Method

Yoichiro Masuda, Hiroshi Masumoto1, Yuuki Kidachi, Akira Watadzu1, Akira Baba, Takashi Goto1, Toshio Hirai1

Department of Electrical Engineering, Faculty of Engineering, Hachinohe Institute of Technology, 88-1 Ohbiraki, Myoh, Hachinohe, Aomori 031, Japan ^1Institute for Material Research, Tohoku University, 2-2-1 Katahira, Aobaku, Sendai, Miyagi 980, Japan

(Received May 22, 1995; accepted for publication July 3, 1995)

Tungsten-bronze-type Ba2NaNb5O15 (BNN) thin films were deposited on fused-quartz and Si substrates. The deposition ratio (Ba:Na:Nb) and rate of the films depend on the sputtering conditions. The dielectric constant and dielectric loss factor are 889 and 0.029, respectively, at room temperature. The leakage current density is about 100 mA/cm2 at 1 MV/cm. The remanent polarization and coercive field are 2.39 µ C/cm2 and 8.33 kV/cm, respectively, and the second-harmonic generation coefficient d is about 2.54×10-13 m/V. Moreover, Raman scattering of the BNN films is discussed.

URL: http://jjap.jsap.jp/link?JJAP/34/5124/
DOI: 10.1143/JJAP.34.5124


|Full Text PDF (1576K)| |Buy This Article| Citation:

References | Citing Articles (14)

  1. T. Taniuchi and K. Yamamoto: Oyo Buturi 12 (1987) 637 [in Japanese].
  2. Y. Miyazaki: Jpn. J. Inst. Electron. Inf. & Commun. Eng. 75 (1992) 596 [in Japanese].
  3. Y. Fukuda, K. Aoki, K. Numata and A. Nishimura: Jpn. J. Appl. Phys. 33 (1994) 5255[JSAP].
  4. H. Masumoto, T. Goto, Y. Masuda, A. Baba and T. Hirai: Appl. Phys. Lett. 58 (1991) 243[AIP Scitation].
  5. K. Aoki, Y. Fukuda, K. Numata and A. Nishimura: Jpn. J. Appl. Phys. 33 (1994) 5155[JSAP].
  6. M. Shimizu, H. Fujisawa, M. Sugiyama and T. Shiosaki: Jpn. J. Appl. Phys. 33 (1994) 5135[JSAP].
  7. K. Yoshimura, M. Ishinabe, S. Okamura and T. Tsukamoto: Jpn. J. Appl. Phys. 34 (1995) 2425[JSAP].
  8. H. Fukakoshi, K. Fukumoto, M. Okuyama and Y. Hamakawa: Jpn. J. Appl. Phys. 33 (1994) 5262[JSAP].
  9. T. Mitsui: Ferro- and Antiferroelectric Substances: Landolt-Bornstein 3 (1969).
  10. M. Takashige, S. Kojima, S. Hamazaki, F. Shimizu and M. Tsukioka: Jpn. J. Appl. Phys. 32 (1993) 4384[JSAP].
  11. Y. Masuda, H. Masumoto, A. Baba, T. Goto and T. Hirai: Jpn. J. Appl. Phys. 32 (1993) 4043[JSAP].
  12. L. G. Van Uitert, H. J. Levisten, J. J. Rubin, C. D. Capin, E. F. Dearborn and W. A. Bonner: Mater. Res. Bull. 3 (1968) 47.
  13. T. Yamada, H. Iwasaki and N. Niizeki: J. Appl. Phys. 41 (1970) 4141[AIP Scitation].
  14. A. Yariv: Introduction to Optical Electronics (Maruzen, Tokyo, 1974) [in Japanese].
  15. Y. Tanabe: Bull. Ceram. Soc. Jpn. 24 (1989) 1076 [in Japanese].
  16. T. Nakamura: Ferroelectricity Involved in Structural Phase Transition (Shyokabo, Tokyo, 1988) [in Japanese].
  17. S. Kojima, S. Hamazaki, M. Tsukioka and M. Takashige: J. Phys. Soc. Jpn. 62 (1993) 1097.
  18. S. Kojima, T. Nakamura, K. Asanuma, M. Takashige and S. Minomura: Solid State Commun. 29 (1979) 779[CrossRef].
|TOP|  |Next Article|  |Table of Contents| |JJAP Home|
Copyright © 2013 The Japan Society of Applied Physics
Contact Information