Jpn. J. Appl. Phys. 34 (1995) pp. L1332-L1335  |Next Article|  |Table of Contents|
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Superbright Green InGaN Single-Quantum-Well-Structure Light-Emitting Diodes

Shuji Nakamura, Masayuki Senoh, Naruhito Iwasa, Shin-ichi Nagahama, Takao Yamada, Takashi Mukai¹

(Received August 23, 1995; accepted for publication September 7, 1995)

Superbright green InGaN single quantum well (SQW) structure light-emitting diodes (LEDs) with a luminous intensity of 12 cd were fabricated. The luminous intensity of these green InGaN SQW LEDs (12 cd) was about 100 times higher than that of conventional green GaP LEDs (0.1 cd). The output power, the external quantum efficiency, the peak wavelength and the full width at half-maximum of green SQW LEDs were 3 mW, 6.3%, 520 nm and 30 nm, respectively, at a forward current of 20 mA. The p-AlGaN/InGaN/n-GaN structure of green InGaN SQW LEDs were grown by metalorganic chemical vapor deposition on sapphire subsutrates.

URL: http://jjap.jsap.jp/link?JJAP/34/L1332/
DOI: 10.1143/JJAP.34.L1332

References | Citing Articles (461)

1. S. Strite and H. Morko\cc: J. Vac. Sci. & Technol. B 10 (1992) 1237[AIP Scitation].
   
2. H. Morko\cc, S. Strite, G. B. Gao, M. I. Lin, B. Sverdlov and M. Burns: J. Appl. Phys. 76 (1994) 1363[AIP Scitation].
   
3. H. Amano, M. Kito, K. Hiramatsu and I. Akasaki: Jpn. J. Appl. Phys. 28 (1989) L2112[JSAP].
   
4. S. Nakamura and T. Mukai: Jpn. J. Appl. Phys. 31 (1992) L1457[JSAP].
   
5. M. A. Khan, J. N. Kuznia, D. T. Olson, M. Blasingame and A. R. Bhattaral: Appl. Phys. Lett. 63 (1993) 2455[AIP Scitation].
   
6. S. Nakamura, N. Iwasa, M. Senoh and T. Mukai: Jpn. J. Appl. Phys. 31 (1992) 1258[JSAP].
   
7. C. Wang and R. F. Davis: Appl. Phys. Lett. 63 (1993) 990[AIP Scitation].
   
8. S. Nakamura, T. Mukai, M. Senoh, S. Nagahama and N. Iwasa: J. Appl. Phys. 74 (1993) 3911[AIP Scitation].
   
9. S. Nakamura, T. Mukai and M. Senoh: Appl. Phys. Lett. 64 (1994) 1687[AIP Scitation].
   
10. S. Nakamura, T. Mukai and M. Senoh: J. Appl. Phys. 76 (1994) 8189[AIP Scitation].
    
11. S. Nakamura, M. Senoh, N. Iwasa and S. Nagahama: Jpn. J. Appl. Phys. Lett. 34 (1995) L797[JSAP].
    
12. M. G. Craford: Circuits & Devices, September (1992) 24.
    
13. H. Sugawara, K. Itaya and G. Hatakoshi: Jpn. J. Appl. Phys. 33 (1994) 5784[JSAP].
    
14. D. E. Eason, Z. Yu, W. C. Hughes, W. H. Roland, C. Boney, J. W. Cook, Jr., J. F. Schetzina, G. Cantwell and W. C. Harasch: Appl. Phys. Lett. 66 (1995) 115[AIP Scitation].
    
15. S. Nakamura: Jpn. J. Appl. Phys. 30 (1991) 1620[JSAP].
    
16. S. Nakamura: Microelec. J. 25 (1994) 651.