Jpn. J. Appl. Phys. 34 (1995) pp. L1517-L1519 |Next Article| |Table of Contents|
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Stimulated Emission by Current Injection from an AlGaN/GaN/GaInN Quantum Well Device
Isamu Akasaki,
Hiroshi Amano,
Shigetoshi Sota,
Hiromitsu Sakai,
Toshiyuki Tanaka1 and
Masayoshi Koike2
Department of Electrical and Electronic Engineering, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468, Japan
^1Pioneer Electronic Corporation, 1-1 Fujimi 6-chome, Tsurugashima-shi, Saitama 350-02, Japan
^2Toyoda Gosei Co., Ltd., 1 Nagahata, Ochiai, Haruhi-cho, Nishikasugai-gun, Aichi 452, Japan
(Received September 20, 1995; accepted for publication October 16, 1995)
Quantum well structures composed of GaInN well and GaN barrier were fabricated. Room-temperature stimulated emission by pulsed current injection is observed from group III nitride using the very thin active layer, for the first time.
URL:
http://jjap.jsap.jp/link?JJAP/34/L1517/
DOI: 10.1143/JJAP.34.L1517
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