Jpn. J. Appl. Phys. 34 (1995) pp. L824-L826  |Next Article|  |Table of Contents|
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Influence of the Emission Site on the Running Durability of Organic Electroluminescent Devices

Yuji Hamada, Takeshi Sano, Kenichi Shibata, Kazuhiko Kuroki

New Materials Research Center, SANYO Electric Co., 1-18-13 Hashiridani, Hirakata, Osaka 573, Japan

(Received May 11, 1995; accepted for publication May 29, 1995)

The influence of the emission site on the running durability of organic electroluminescent devices was examined. The fundamental device structure of MgIn/BeBq2/TPD/MTDATA/ITO ( BeBq2=bis(10-hydroxybenzo[h]quinolinato)beryllium, TPD=N,N-diphenyl-N,N-(3-methylphenyl)-1,1-biphenyl-4,4-diamine, MTDATA=4,4,4′′-tris(3-methylphenylphenylamino)triphenylamine) was employed. BeBq2 has the electron transport property, and TPD and MTDATA have the hole transport property. The emitting material [rubrene] was doped in the TPD layer of device A and in the BeBq2 layer of device B. Both devices A and B showed high luminance of more than 10000 cd/m2. However, the running lifetimes of devices A and B, in which the initial luminance of 500 cd/m2 was reduced to one-half under a constant driving current, were 3554 h and 110 h, respectively. It was thus found that the emission site exerts an influence on the running durability.

URL: http://jjap.jsap.jp/link?JJAP/34/L824/
DOI: 10.1143/JJAP.34.L824


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