Jpn. J. Appl. Phys. 35 (1996) pp. 1415-1419  |Next Article|  |Table of Contents|
|Full Text PDF (735K)| |Buy This Article|

P-Type Conducting ZnSe and ZnSSe by N₂-Gas Doping During Molecular Beam Epitaxy

Yuji Hishida, Tomoyuki Yoshie, Katsumi Yagi, Keiichi Yodoshi and Tatsuhiko Niina

(Received September 12, 1995; accepted for publication November 28, 1995)

Highly conductive p-ZnSe and ZnSSe can be grown by N₂-gas doping without any activation process during molecular beam epitaxial growth. Photoluminescence spectra indicated that the properties of N₂-gas- and nitrogen-radical-doped ZnSe with nearly equal N _A–N _D are almost the same. Using the N₂-gas doping method, the first laser oscillation from a ZnSe-based laser diode without nitrogen-radical doping was achieved. The LED driving voltage was 3.8 V at the operating current of 20 mA.

URL: http://jjap.jsap.jp/link?JJAP/35/1415/
DOI: 10.1143/JJAP.35.1415
KEYWORDS:zinc selenide, p-type doping, nitrogen acceptor, nitrogen-radical doping, nitrogen-gas doping, photoluminescence, laser diode, light-emitting diode

References | Citing Article (1)