(Received September 12, 1995; accepted for publication November 28, 1995)
Highly conductive p-ZnSe and ZnSSe can be grown by N2-gas doping without any activation process during molecular beam epitaxial growth. Photoluminescence spectra indicated that the properties of N2-gas- and nitrogen-radical-doped ZnSe with nearly equal N A–N D are almost the same. Using the N2-gas doping method, the first laser oscillation from a ZnSe-based laser diode without nitrogen-radical doping was achieved. The LED driving voltage was 3.8 V at the operating current of 20 mA.
KEYWORDS:zinc selenide, p-type doping, nitrogen acceptor, nitrogen-radical doping, nitrogen-gas doping, photoluminescence, laser diode, light-emitting diode