Jpn. J. Appl. Phys. 35 (1996) pp. 4724-4727  |Next Article|  |Table of Contents|
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Growth Rate and Surface Morphology of Diamond Homoepitaxial Films on Misoriented (001) Substrates

Takashi Tsuno, Hiromu Shiomi, Yoshiaki Kumazawa, Shin-ichi Shikata and Shin-ichi Akai

(Received January 18, 1996; accepted for publication June 20, 1996)

Homoepitaxial films were grown on misoriented diamond(001) substrates using microwave plasma-assisted chemical vapor deposition with a methane and hydrogen gas mixture. The dependence of growth rate and surface morphology on methane concentration, substrate temperature and off-angle was investigated. The growth rate dependence was significant for a growth at a high substrate temperature (1000° C) and low methane concentration (1%), suggesting the surface migration distance of the nanometer order. A flat surface was observed macroscopically and microscopically for films grown on off-substrates at a high substrate temperature and low methane concentration.

URL: http://jjap.jsap.jp/link?JJAP/35/4724/
DOI: 10.1143/JJAP.35.4724

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