Jpn. J. Appl. Phys. 35 (1996) pp. 5012-5014  |Next Article|  |Table of Contents|
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Static Characteristics of Piezoelectric Thin Film Buckling Actuator

Shuichi Wakabayashi, Minoru Sakata, Hiroshi Goto, Masashi Takeuchi and Tsuneji Yada

(Received May 16, 1996; accepted for publication June 28, 1996)

We have developed a diaphragm piezoelectric microactuator. The diaphragm consists of a Pb(Zr, Ti)O₃ (PZT) thin film, electrode layers, an isolation layer and a Si substrate. The diaphragm is deflected by transverse stress in the PZT thin film which is fabricated by a sputtering and annealing process. The PZT thin film has a piezoelectric coefficient d₃₁ of -100 pC/N, which is comparable to that of bulk PZT. A diaphragm deflection of 3 µ m was obtained at an electric field of 16 V/µm.

URL: http://jjap.jsap.jp/link?JJAP/35/5012/
DOI: 10.1143/JJAP.35.5012

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