Jpn. J. Appl. Phys. 35 (1996) pp. 5089-5093  |Next Article|  |Table of Contents|
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Low Temperature Deposition of (Ba, Sr)TiO₃ Films by Electron Cyclotron Resonance Plasma Chemical Vapor Deposition

Shuji Sone, Hisato Yabuta, Yoshitake Kato, Toshihiro Iizuka¹, Shintaro Yamamichi¹, Hiromu Yamaguchi¹, Pierre-Yves Lesaicherre¹, Shozo Nishimoto¹ and Masaji Yoshida

(Received July 4, 1996; accepted for publication July 25, 1996)

(Ba, Sr)TiO₃ films deposited by electron cyclotron resonance plasma chemical vapor deposition at 450° C and 500° C are investigated. The crystallinity, evaluated by X-ray diffraction and by measuring grain size, and electrical properties of films were evaluated for changes in deposition temperature, deposition rate, and Ba content, without a post-deposition annealing. Slower deposition rates as well as higher deposition temperatures were found to improve film crystallinity. Evaluation of electrical properties and film crystallinity revealed that the optimum Ba content of a film deposited at 500° C was 0.4. A 27 nm thick film deposited on a Pt substrate at 500° C and at 1.1 nm/min with a Ba content of 0.4 exhibited a SiO₂ equivalent thickness of 0.65 nm and a leakage current density of 4.6×10^-7 A/cm² at 1 V. The film composition was found to be sufficiently uniform throughout, i.e., from the top to the side of the films on a stacked bottom electrode.

URL: http://jjap.jsap.jp/link?JJAP/35/5089/
DOI: 10.1143/JJAP.35.5089

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