Jpn. J. Appl. Phys. 35 (1996) pp. 5229-5231  |Next Article|  |Table of Contents|
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Low-Voltage Switching Characteristics of SrBi₂Ta₂O₉ Capacitors

Kazushi Amanuma and Takemitsu Kunio

(Received May 30, 1996; accepted for publication June 13, 1996)

Ferroelectric capacitor arrays were fabricated using SrBi₂Ta₂O₉ (SBT) thin films. Hysteresis and pulse responses were measured as functions of capacitor size and applied voltage. The remanent polarization (P _r) at 5 V does not depend on capacitor size, though P _r at low applied voltage decreases considerably as capacitor size decreases below 10 µ m. High-voltage pulse application enhances low-voltage polarization switching. Retention characteristics strongly depend on operating voltage. Switching charge at 2 V or above is stable up to 10⁴ s retention, while that at 1 V operation decreases with increasing retention time.

URL: http://jjap.jsap.jp/link?JJAP/35/5229/
DOI: 10.1143/JJAP.35.5229

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