Jpn. J. Appl. Phys. 35 (1996) pp. 5229-5231 |Next Article| |Table of Contents|
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Low-Voltage Switching Characteristics of SrBi2Ta2O9 Capacitors
Microelectronics Research Laboratories, NEC Corporation, Sagamihara, Kanagawa 229, Japan
(Received May 30, 1996; accepted for publication June 13, 1996)
Ferroelectric capacitor arrays were fabricated using SrBi2Ta2O9 (SBT) thin films. Hysteresis and pulse responses were measured as functions of capacitor size and applied voltage. The remanent polarization (P r) at 5 V does not depend on capacitor size, though P r at low applied voltage decreases considerably as capacitor size decreases below 10 µ m. High-voltage pulse application enhances
low-voltage polarization switching. Retention characteristics strongly depend on operating voltage. Switching charge at 2 V or above is stable up to 104 s retention, while that at 1 V operation decreases with increasing retention time.
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