Jpn. J. Appl. Phys. 35 (1996) pp. L1013-L1015  |Next Article|  |Table of Contents|
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Growth of High-Quality AlN and AlN/GaN/AlN Heterostructure on Sapphire Substrate

Yasuo Ohba and Ako Hatano

(Received April 30, 1996; accepted for publication July 15, 1996)

Metalorganic chemical vapor deposition (MOCVD) growth of AlN on sapphire substrates was investigated, with the aim of device quality AlN/GaN/AlN double heterostructures. Growth temperature as high as 1300° C was required to obtain AlN epitaxial layers with sharp X-ray diffraction peaks. By growing AlN at the high growth temperature, residual stress at the heterointerface was effectively reduced. The AlN epitaxial layers with smooth surfaces were grown using a low V/III ratio together with the high growth temperature. AlN/GaN/AlN double heterostructures with appropriate layer thicknesses for DH lasers and flat heterointerfaces were grown on sapphire substrates.

URL: http://jjap.jsap.jp/link?JJAP/35/L1013/
DOI: 10.1143/JJAP.35.L1013

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