Jpn. J. Appl. Phys. 35 (1996) pp. L953-L955 |Next Article| |Table of Contents|
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Reduction of Threshold Current Density of Wurtzite GaN/AlGaN Quantum Well Lasers by Uniaxial Strain in (0001) Plane
Masakatsu Suzuki and
Takeshi Uenoyama
Central Research Laboratories, Matsushita Electric Industrial Co., Ltd.,
3–4 Hikaridai, Seikacho, Kyoto 619-02, Japan
(Received May 27, 1996; accepted for publication June 28, 1996)
The uniaxial strain effect in the (0001) plane on the electronic and optical gain properties of wurtzite GaN/AlGaN quantum well lasers is investigated on the basis of k·p theory. In order to obtain the required physical parameters, the first-principles band calculations are used. It is found that the uniaxial strain in the (0001) plane causes much lower threshold current density than the biaxial strain does. The relation between the uniaxial strain's direction and the optical polarization is clarified as well. As a result, we predict that the uniaxial strain in the (0001) plane is one of the preferable approaches for the efficient improvement of the GaN-based lasers performance.
URL:
http://jjap.jsap.jp/link?JJAP/35/L953/
DOI: 10.1143/JJAP.35.L953
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