Jpn. J. Appl. Phys. 36 (1997) pp. 7160-7161  |Next Article|  |Table of Contents|
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Room-Temperature Photoreflectance of CuAlxGa 1-xSe 2 Alloys

Sho Shirakata, Shigefusa Chichibu1 and Shigehiro Isomura

Faculty of Engineering, Ehime University, Matsuyama, Ehime 790, Japan 1Faculty of Science and Technology, Science University of Tokyo, Noda, Chiba 278, Japan

(Received August 6, 1997; accepted for publication October 1, 1997)

Photoreflectance (PR) spectra have been measured at room temperature for single crystals of CuAlxGa1-xSe2 alloys grown by the chemical vapor transport method. Exciton transition energies related to valence-to-conduction bands at room temperature (EA, EB and EC in eV) have been determined as a function of composition as EA =2.654x + 1.674(1-x)-0.22x(1-x), EB =2.767 x + 1.749(1-x)-0.17x(1-x) and EC=2.923x+1.972(1-x)-0.32x(1-x). The PR results are discussed in terms of PL spectra.

URL: http://jjap.jsap.jp/link?JJAP/36/7160/
DOI: 10.1143/JJAP.36.7160
KEYWORDS:single crystal of CuAlxGa1-xSe2, alloy semiconductor, chalcopyrite semiconductor, photoreflectance, modulation spectroscopy


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