Jpn. J. Appl. Phys. 36 (1997) pp. L330-L333  |Next Article|  |Table of Contents|
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Capacitance Anomaly in the Negative Differential Resistance Region of Resonant Tunneling Diodes

Naofumi Shimizu, Takao Waho and Tadao Ishibashi

(Received October 23, 1996; accepted for publication February 20, 1997)

For In_0.53Ga_0.47As/AlAs resonant tunneling diodes, the peak structure in the capacitance-voltage ( C-V) characteristics in the negative differential resistance (NDR) region was investigated. We experimentally reveal that the electron sheet density that is responsible for the capacitance peak is equal to half of that in the quantum well at the peak voltage. The derived electron sheet density in the quantum well at the peak current is 3.2×10¹¹ cm^-2 and the resulting electron lifetimes in the quantum well are 320 and 580 fs for 2.0- and 2.3-nm AlAs barriers.

URL: http://jjap.jsap.jp/link?JJAP/36/L330/
DOI: 10.1143/JJAP.36.L330

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