Jpn. J. Appl. Phys. 36 (1997) pp. L382-L385  |Next Article|  |Table of Contents|
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Quantum-Confined Stark Effect due to Piezoelectric Fields in GaInN Strained Quantum Wells

Tetsuya Takeuchi, Shigetoshi Sota, Maki Katsuragawa, Miho Komori, Hideo Takeuchi, Hiroshi Amano and Isamu Akasaki

(Received December 5, 1996; accepted for publication February 21, 1997)

We have studied the influence of piezoelectric fields on luminescence properties of GaInN strained quantum wells. Our calculation suggests that an electric field of 1.08 MV/cm is induced by the piezoelectric effect in strained Ga_0.87In_0.13N grown on GaN. The photoluminescence peak energy of the Ga_0.87In_0.13N strained quantum wells showed blue shift with increasing excitation intensity. Moreover, the well-width dependence of its luminescence peak energy was well explained when the piezoelectric fields were taken into account. These results clearly showed that the piezoelectric field induced the quantum-confined Stark effect.

URL: http://jjap.jsap.jp/link?JJAP/36/L382/
DOI: 10.1143/JJAP.36.L382
KEYWORDS:GaInN, strained quantum well, (0001) orientation, piezoelectric effect, quantum-confined Stark effect

References | Citing Articles (497)

1. I. Akasaki, S. Sota, H. Sakai, T. Tanaka, M. Koike and H. Amano: Electron. Lett. 32 (1996) 1105[AIP Scitation].
2. S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, H. Kiyoku and Y. Sugimoto: Jpn. J. Appl. Phys. 35 (1996) L74[JSAP].
3. S. Nakamura, M. Senoh, N. Iwasa and S. Nagahama: Appl. Phys. Lett. 67 (1995) 1868[AIP Scitation].
4. S. Nakamura, M. Senoh, N. Iwase, S. Nagahama, T. Yamada and T. Mukai: Jpn. J. Appl. Phys. 34 (1995) L1332[JSAP].
5. M. Koike, N. Shibata, S. Yamasaki, S. Nagai, S. Asami, H. Kato, N. Koide, H. Amano and I. Akasaki: Proc. 1st Int. Symp. GaN & Related Materials, Boston, 1995 (Material Research Society, Pittsburgh, 1995) Vol. 395, p. 889.
6. T. Takeuchi, H. Takeuchi, S. Sota, H. Sakai, H. Amano and I. Akasaki: Jpn. J. Appl. Phys. 36 (1997) L177[JSAP].
7. J. G. Gualtieri, A. Koshinski and A. Ballato: IEEE Trans. Ultrason. Ferroelectr. Freq. Control 41 (1994) 53.
8. A. Bykhovski, B. Gelmont, M. Shur and A. Khan: J. Appl. Phys. 77 (1995) 1616[AIP Scitation].
9. A. D. Bykhovski, V. V. Kaminski, M. S. Sur, Q. C. Chen and M. A. Khan: Appl. Phys. Lett. 68 (1996) 818[AIP Scitation].
10. G. Martin, A. Botchkarev, A. Rockett and H. Morkoc: Appl. Phys. Lett. 68 (1996) 2541[AIP Scitation].
11. D. L. Smith and C. Mailhiot: Phys. Rev. Lett. 58 (1987) 1264[APS].
12. D. Sun and E. Towe: Jpn. J. Appl. Phys. 33 (1994) 702[JSAP].
13. E. A. Cardi, T. Y. Chang, K. W. Goossen and L. F. Eastman: Appl. Phys. Lett. 56 (1990) 659[AIP Scitation].
14. R. L. Tober and T. B. Bahder: Appl. Phys. Lett. 63 (1993) 2369[AIP Scitation].
15. M. P. Halsall, J. E. Nicholls, J. J. Davies, B. Cockayne and P. J. Wright: J. Appl. Phys. 71 (1992) 907[AIP Scitation].
16. M. Yamaguchi, T. Yagi, T. Azuhata, T. Sota, K. Suzuki, S. Chichibu and S. Nakamura: to be published in J. Phys. Condens. Matter.
17. S. Nakamura, T. Muaki, M. Senoh, S. Nagahama and N. Iwasa: J. Appl. Phys. 74 (1993) 3911[AIP Scitation].
18. J. W. Matthews and A. E. Blakeslee: J. Cryst. Growth 32 (1974) 265[CrossRef].
19. A. Fischer, H. Kuhne and H. Richter: Phys. Rev. Lett. 73 (1994) 2712[APS].
20. S. Keller, B. P. Keller, D. Kapolnek, A. C. Abare, H. Masui, L. A. Coldren, U. K. Mishra and S. P. DenBaars: Appl. Phys. Lett. 68 (1996) 3147[AIP Scitation].
21. D. A. B. Miller, D. S. Chemla, T. C. Damen, A. C. Gossard, W. Wiegmann, T. H. Wood and C. A. Burrus: Phys. Rev. Lett. 53 (1984) 2173[APS].
22. M. Suzuki and T. Uenoyama: Phys. Rev. B 52 (1995) 8132[APS].
23. S. Chichibu, T. Azuhata, T. Sota and S. Nakamura: Appl. Phys. Lett. 69 (1996) 4188[AIP Scitation].
24. Y. Narukawa, Y. Kawakami, Sz. Fujita, Sg. Fujita and S. Nakamura: Abstr. MRS 1996 Fall Meeting, Boston, 1996 (Material Research Society, Pittsburgh, 1996) p. 309.