Jpn. J. Appl. Phys. 36 (1997) pp. L687-L689  |Next Article|  |Table of Contents|
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Improvement of SiO ₂ Properties by Heating Treatment in High Pressure H ₂O Vapor

Toshiyuki Sameshima and Mitsuru Satoh

(Received March 12,1997; accepted for publication April 21, 1997)

Properties of SiO₂ and SiO₂/Si interfaces formed by plasma chemical vapor deposition were improved by heating at 270°C in high pressure H₂O vapor. The treatment reduced the fixed oxide charge density from 2.5×10¹² cm^-2 (initial) to 8×10¹⁰ cm^-2 as the H₂O vapor pressure increased to 54 bar. The peak frequency of the absorption band caused by the Si-O antisymmetric stretching vibration mode was increased to 1078 cm^-1 for treatment with 54 bar H₂O vapor, while it was 1062 cm^-1 before the treatment. The full width at half-maximum of the absorption band was reduced to 65 cm^-1.

URL: http://jjap.jsap.jp/link?JJAP/36/L687/
DOI: 10.1143/JJAP.36.L687

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