Jpn. J. Appl. Phys. 37 (1998) pp. 5150-5153  |Next Article|  |Table of Contents|
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Characterization of Pb(Zr, Ti)O₃ Thin Films on Si Substrates Using MgO Intermediate Layer for Metal/Ferroelectric/Insulator/Semiconductor Field Effect Transistor Devices

Junji Senzaki, Koji Kurihara, Naoki Nomura, Osamu Mitsunaga, Yoshitaka Iwasaki and Tomo Ueno

(Received May 6, 1998; accepted for publication July 17, 1998)

Pb(Zr, Ti)O₃(PZT)/MgO/Si(001) stacked structures, one of the potential components of ferroelectric-gate field effect trnsistors, have been fabricated and characterized. According to the electrical characterization of MgO/Si structures, MgO thin films prepared on Si substrates at a low growth rate showed a small leakage current of ∼10^-8 A/cm² order in an electric field of 1 MV/cm. In C-V measurements of as-grown MgO/Si interfaces, injection-type hysteresis was observed because of crystal defects in the MgO film adjacent to the interface. After oxygen annealing at 400°C, however, it showed no hysteresis and a low interface trap density of the order of 10¹¹ cm^-2eV^-1 was achieved with no formation of a low-dielectric layer at the MgO/Si interface. These results indicate that MgO thin films are applicable as gate insulators of FETs. After a PZT film was deposited on the MgO/Si structure, the C-V characteristic of the stacked structure showed a ferroelectric hysteresis curve and a low interface trap density of 5×10¹¹ cm^-2eV^-1. A maximum memory window width of 1.2 V was obtained for the PZT thin film on Si substrate with a MgO intermediate layer.

URL: http://jjap.jsap.jp/link?JJAP/37/5150/
DOI: 10.1143/JJAP.37.5150

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