Jpn. J. Appl. Phys. 37 (1998) pp. 6556-6561  |Next Article|  |Table of Contents|
|Full Text PDF (2656K)| |Buy This Article|

High-Quality Epitaxial MnSi(111) Layers Grown in the Presence of an Sb Flux

Koji Matsuda, Hirokazu Tatsuoka, Kazuharu Matsunaga, Koji Isaji, Hiroshi Kuwabara, Paul D. Brown¹, Yan Xin¹, Rafal Dunin-Borkowski¹ and Colin J. Humphreys¹

(Received July 31, 1998; accepted for publication October 5, 1998)

MnSi epitaxial layers have been grown on (111) and (001)-oriented Si substrates by Mn deposition and reaction with Si in the presence of an Sb flux. Characterization using transmission electron microscopy (TEM) confirmed the formation of high-quality epitaxial layers with smooth interfaces between the MnSi and the Si(111) substrate, when grown under optimal conditions, without the deposition of elemental Sb or Sb-based compounds. MnSi layers are found to be rotated 30° with respect to the Si(111) substrate to reduce the lattice mismatch. Evidence only for the presence of MnSi was found and there was no evidence of any other Mn–Si phases. The additional formation of MnSb is found to depend on the rate of formation of MnSi, which is primarily governed by the Mn flux rate and the growth temperature. By way of comparison, polycrystalline mixed phase Mn-silicide layers were formed by direct deposition of Mn and reaction with Si(111) at elevated temperatures in the absence of an Sb flux.

URL: http://jjap.jsap.jp/link?JJAP/37/6556/
DOI: 10.1143/JJAP.37.6556

References | Citing Articles (10)

1. H. Lange: Silicide Thin Films–Fabrication, Properties, and Applications, eds. R. T. Tung, K. Maex, P. W. Pellegrini and L. H. Allen, Mater. Res. Soc. Symp. Proc. 402 (1995) p. 307.
2. A. Hiraki: Appl. Surf. Sci. 56/58 (1992) 370.
3. K. N. Tu and J. W. Mayer: Thin Films Interdiffusion and Reactions, eds. J. M. Poate, K. N. Tu and J. W. Mayer (Wiley, New York, 1978) Chap. 10.
4. K. N. Tu: Advances in Electronic Materials, eds. B. W. Wessels and G. Y. Chin (American Society for Metals, Meta Park, OH, 1986) Chap. 7.
5. C. I. Gregory, D. B. Lambrick and N. R. Bernhoeft: J. Magn. & Magn. Mater. 104/107 (1992) 689.
6. P. Lerch and T. Jarlborg: J. Magn. & Magn. Mater. 131 (1994) 321.
7. P. Harris, B. Lebech, H. S. Shim, K. Mortensen and J. S. Pedersen: Physica B 213/214 (1995) 357.
8. C. Thessieu, J. Flouquet and G. Lapertot: Solid State Commun. 95 (1995) 707[CrossRef].
9. K. E. Sundström, S. Petersson and P. A. Tove: Phys. Status Solidi A 20 (1973) 563.
10. M. Eizenberg and K. N. Tu: J. Appl. Phys. 53 (1982) 6885[AIP Scitation].
11. L. Zhang and D. G. Ivey: J. Mater. Res. 6 (1991) 1518.
12. J. Wang, M. Hirai, M. Kusaka and M. Iwami: Appl. Surf. Sci. 113/114 (1997) 53.
13. H. Tatsuoka, K. Isaji, K. Sugiura, H. Kuwabara, P. D. Brown, Y. Xin and C. J. Humphreys: J. Appl. Phys. 83 (1998) 5504[AIP Scitation].
14. W. G. Moffatt: The Handbook of Binary Phase Diagrams (Genium Publishing, Schenectady, NewYork, 1978) p. 12/79.
15. R. M. Walser and R. W. Bené: Appl. Phys. Lett. 28 (1976) 624[AIP Scitation].
16. O. Kubaschewski and C. B. Alcock: International Series on Materials Science and Technology: Metallurgical Thermo-Chemistry (Pergamon Press, Oxford, 1979) 5th ed., Vol. 24, p. 294.
17. G. Majni, C. Nobili, G. Ottaviani, M. Costaato and E. Galli: J. Appl. Phys. 52 (1981) 4047[AIP Scitation].
18. K. N. Tu, G. Ottaviani, R. D. Thompson and J. W. Mayer: J. Appl. Phys. 53 (1982) 4406[AIP Scitation].
19. K. Fujita, S. Fukatsu, H. Yaguchi, T. Igarashi, Y. Shiraki and R. Ito: Jpn. J. Appl. Phys. 29 (1990) L1981[JSAP].
20. Y. Xin, P. D. Brown, R. E. Dunin-Borkowski, C. J. Humphreys, T. S. Cheng and C. T. Foxon: J. Cryst. Growth 171 (1997) 321.