Jpn. J. Appl. Phys. 37 (1998) pp. L1283-L1285  |Next Article|  |Table of Contents|
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New Semiconductor Alloy GaAs_1-xBi_x Grown by Metal Organic Vapor Phase Epitaxy

Kunishige Oe and Hiroshi Okamoto¹

(Received August 26, 1998; accepted for publication September 9, 1998)

A new semiconductor alloy material, GaAs_1-xBi_x has been created by Metal Organic Vapor Phase Epitaxial (MOVPE) growth. A low growth temperature, such as 365°C, is required to obtain the alloy. X-ray diffraction measurements of alloy layers reveal that the diffraction patterns are satisfactory. The maximum GaBi content in the GaAsBi alloy estimated from the lattice constant is around 2%, which is consistent with that estimated from secondary ion mass spectroscopy (SIMS) measurements. In a photoluminescence (PL) measurement, a single peak spectrum is observed from 10 to 300 K. The temperature variation of the PL peak energy is as small as 0.1 meV/K.

URL: http://jjap.jsap.jp/link?JJAP/37/L1283/
DOI: 10.1143/JJAP.37.L1283
KEYWORDS:GaAs_{1- x}Bi _x alloy, new semiconductor, temperature-insensitive, metastable alloy, metal-organic vapor phase epitaxy

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