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Jpn. J. Appl. Phys. 37 (1998) pp. L1283-L1285  |Table of Contents|
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New Semiconductor Alloy GaAs1-xBix Grown by Metal Organic Vapor Phase Epitaxy

Kunishige Oe and Hiroshi Okamoto

Articles citing this article

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  1. Journal of Crystal Growth 370 (2013) 186
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  2. Journal of Crystal Growth (2013)
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  3. Journal of Electronic Materials 42 (2013) 26
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  4. Applied Physics Express 5 (2012) 015503
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  5. Infrared Physics & Technology 55 (2012) 156
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  6. Infrared Physics & Technology 55 (2012) 306
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  7. Japanese Journal of Applied Physics 51 (2012) 040204
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  8. Journal of Alloys and Compounds 530 (2012) 36
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  9. Journal of Applied Physics 112 (2012) 113508
    Temperature dependence of E0 and E0 + ΔSO transitions in In0.53Ga0.47BixAs1−x alloys studied by photoreflectance
    R. Kudrawiec, J. Kopaczek, J. Misiewicz, W. Walukiewicz, J. P. Petropoulos, Y. Zhong, P. B. Dongmo, and J. M. O. Zide
  10. Journal of Applied Physics 111 (2012) 066103
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  11. Journal of Solid State Chemistry 186 (2012) 47
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  12. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures 30 (2012) 02B114
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  13. MRS Proceedings 1432 (2012)
    Study of the Deep Levels of a GaAs/p-GaAs1−xBix Heterostructure Grown by Molecular Beam Epitaxy
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  14. Optics Express 20 (2012) 11574
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  15. Physical Review B 86 (2012)
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  16. Thin Solid Films 520 (2012) 6415
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  17. physica status solidi (a) 209 (2012) 419
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  18. Applied Physics Letters 99 (2011) 251906
    Contactless electroreflectance study of E0 and E0?+?ΔSO transitions in In0.53Ga0.47BixAs1−x alloys
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  19. Applied Physics Letters 98 (2011) 122107
    Photoluminescence investigation of high quality GaAs1−xBix on GaAs
    A. R. Mohmad, F. Bastiman, J. S. Ng, S. J. Sweeney, and J. P. R. David
  20. Japanese Journal of Applied Physics 50 (2011) 080203
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  21. Journal of Alloys and Compounds 509 (2011) 9685
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  22. Journal of Crystal Growth 330 (2011) 35
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  23. Journal of Crystal Growth (2011)
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  24. Journal of Materials Research 26 (2011) 2887
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  25. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures 29 (2011) 03C121
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  26. Semiconductor Science and Technology 26 (2011) 055020
    Deep level defects in GaAs1−xBix/GaAs heterostructures
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  27. Semiconductor Science and Technology 26 (2011) 085033
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  28. Semiconductor Science and Technology 26 (2011) 105020
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  29. Applied Physics Express 3 (2010) 062201
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  30. Japanese Journal of Applied Physics 49 (2010) 070211
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  31. Physical Review B 81 (2010) 235211
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  32. Applied Physics Letters 95 (2009) 011910
    Spectroscopic ellipsometry study of GaAs1−xBix material grown on GaAs substrate by atmospheric pressure metal-organic vapor-phase epitaxy
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  33. Journal of Applied Physics 106 (2009) 023518
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  34. Semiconductor Science and Technology 24 (2009) 035018
    Contactless electroreflectance studies of ultra-dilute GaAs1−xBix alloys
    L Bhusal, A J Ptak, R France, and A Mascarenhas
  35. Applied Physics Letters 93 (2008) 131915
    Structural investigation of GaAs1−xBix/GaAs multiquantum wells
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  36. Applied Physics Letters 92 (2008) 262105
    Influence of bismuth incorporation on the valence and conduction band edges of GaAs1−xBix
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  37. Semiconductor Science and Technology 23 (2008) 125034
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  38. Thin Solid Films 516 (2008) 8372
    Atmospheric-pressure metalorganic vapour phase epitaxy optimization of GaAsBi alloy
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  39. physica status solidi (c) 5 (2008) 2719
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  40. Applied Physics Letters 91 (2007) 082101
    Photogenerated plasmons in GaAs1−xBix
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  41. Physical Review B 75 (2007) 045203
    Valence-band anticrossing in mismatched III-V semiconductor alloys
    K. Alberi, J. Wu, W. Walukiewicz, K. Yu, O. Dubon, S. Watkins, C. Wang, X. Liu, Y.-J. Cho, and J. Furdyna
  42. Physical Review B 73 (2006) 115107
    Structural and electronic properties of III-V bismuth compounds
    M. Ferhat and A. Zaoui
  43. physica status solidi (b) 243 (2006) 1421
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  44. physica status solidi (c) 3 (2006) 693
    Temperature-insensitive refractive index of GaAsBi alloy for laser diode in WDM optical communication
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  45. Journal of Applied Physics 98 (2005) 053505
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  46. Journal of Applied Physics 97 (2005) 113510
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  47. Physical Review B 71 (2005) 155201
    Similar and dissimilar aspects of III-V semiconductors containing Bi versus N
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  48. physica status solidi (b) 242 (2005) 2856
    How do electronic properties of conventional III-V semiconductors hold for the III-V boron bismuth BBi compound?
    D. Madouri and M. Ferhat
  49. Japanese Journal of Applied Physics 43 (2004) L1350
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  50. MRS Proceedings 829 (2004) B11.6
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  51. Physical Review B 70 (2004) 035212
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  52. Applied Physics Letters 82 (2003) 3874
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  53. Applied Physics Letters 82 (2003) 2245
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  54. Japanese Journal of Applied Physics 42 (2003) 371
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  55. Japanese Journal of Applied Physics 42 (2003) L1235
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  56. Japanese Journal of Applied Physics 41 (2002) 2801
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  57. Journal of Applied Physics 89 (2001) 1657
    Raman studies on GaAs1−xBix and InAs1−xBix
    Prabhat Verma, K. Oe, M. Yamada, H. Harima, M. Herms, and G. Irmer

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