Jpn. J. Appl. Phys. 37 (1998) pp. L1286-L1287 |Next Article| |Table of Contents|
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A Large Output Voltage Swing of a Resonant Tunneling Flip-Flop Circuit Employing a Monostable-Bistable Transition Logic Element (MOBILE)
Koichi Maezawa,
Hideaki Matsuzaki,
Jiro Osaka,
Masafumi Yamamoto and
Taiichi Otsuji1
NTT System Electronics Laboratories, 3-1 Morinosato Wakamiya,
Atsugi-shi, Kanagawa 243-0198, Japan
1NTT Optical Network Systems Laboratories, 1-1 Hikarinooka,
Yokosuka-shi, Kanagawa 239-0847, Japan
(Received August 21, 1998; accepted for publication September 28, 1998)
A resonant tunneling flip-flop circuit was fabricated based on a
monostable-bistable transition logic element (MOBILE). In this work, an
Source Coupled FET Logic (SCFL) type output buffer and depletion-mode High
Electron Mobility Transistors (HEMTs) were employed instead of a Direct
Coupled FET Logic (DCFL) type buffer and enhancement-mode HEMTs used in
previous studies. A practical output voltage level close to the SCFL
interface was demonstrated for the first time with a MOBILE circuit
operating at a high bit rate of up to 20 Gb/s. This indicates that the
MOBILE has sufficient current drivability.
URL:
http://jjap.jsap.jp/link?JJAP/37/L1286/
DOI: 10.1143/JJAP.37.L1286
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