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Amber InGaN-Based Light-Emitting Diodes Operable at High Ambient Temperatures
Takashi Mukai, Hiroki Narimatsu and Shuji Nakamura
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- Violet InGaN/GaN/AlGaN-Based Laser Diodes Operable at 50°C with a Fundamental Transverse Mode
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- Shuji Nakamura, Masayuki Senoh, Shin-ichi Nagahama, Toshio Matsushita, Hiroyuki Kiyoku, Yasunobu Sugimoto, Tokuya Kozaki, Hitoshi Umemoto, Masahiko Sano and Takashi Mukai
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Japanese Journal of Applied Physics 38 (1999) L703
- Effect of Slight Misorientation of Sapphire Substrate on Metalorganic Chemical Vapor Deposition Growth of GaN
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- Takayuki Yuasa, Yoshihiro Ueta, Yuhzoh Tsuda, Atushi Ogawa, Mototaka Taneya and Katsutoshi Takao
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Japanese Journal of Applied Physics 38 (1999) 3976
- Characteristics of InGaN-Based UV/Blue/Green/Amber/Red Light-Emitting Diodes
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- Takashi Mukai, Motokazu Yamada and ShujiNakamura
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Journal of Applied Physics 86 (1999) 4491
- Low-resistance ohmic contacts to p-type GaN achieved by the oxidation of Ni/Au films
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- Jin-Kuo Ho, Charng-Shyang Jong, Chien C. Chiu, Chao-Nien Huang, Kwang-Kuo Shih, Li-Chien Chen, Fu-Rong Chen, and Ji-Jung Kai
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Materials Science and Engineering B 59 (1999) 298
- Optical properties of InGaN quantum wells
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- S.F Chichibu, A.C Abare, M.P Mack, M.S Minsky, T Deguchi, D Cohen, P Kozodoy, S.B Fleischer, S Keller, and J.S Speck
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Semiconductor Science and Technology 14 (1999) R27
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- S Nakamura
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physica status solidi (a) 176 (1999) 85
- Properties of Quantum Well Excitons in GaN/AlGaN and InGaN/GaN/AlGaN UV, Blue, Green, and Amber Light Emitting Diode Structures
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- S. F. Chichibu, T. Deguchi, T. Sota, K. Wada, S. P. DenBaars, T. Mukai, and S. Nakamura
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physica status solidi (a) 176 (1999) 15
- Present Status of InGaN-Based Laser Diodes
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- S. Nakamura
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physica status solidi (a) 176 (1999) 459
- Homoepitaxial Growth and Luminescence Characterization of GaN Epilayer by RF-MBE on MOCVD-Grown GaN Substrate
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- S. Kurai, S. Kubo, T. Okazaki, S. Manabe, T. Sugita, A. Kawabe, Y. Yamada, and T. Taguchi
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Japanese Journal of Applied Physics 37 (1998) L1358
- Current and Temperature Dependences of Electroluminescence of InGaN-Based UV/Blue/Green Light-Emitting Diodes
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- Takashi Mukai, Motokazu Yamada and Shuji Nakamura
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Japanese Journal of Applied Physics 37 (1998) L839
- InGaN-Based Blue Light-Emitting Diodes Grown on Epitaxially Laterally Overgrown GaN Substrates
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- Takashi Mukai, Kazunori Takekawa and Shuji Nakamura
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MRS Proceedings 537 (1998) G1.1
- InGaN/GaN/AlGaN-Based Leds and Laser Diodes
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- S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Matushita, and T. Mukai
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MRS Proceedings 537 (1998) G2.7
- Spectroscopic Studies in InGaN Quantum Wells
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- S. E Chichibu, T. Sota, K. Wada, S. P DenBaars, and S. Nakamura