Jpn. J. Appl. Phys. 37 (1998) pp. L482-L483  |Next Article|  |Table of Contents|
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Reliability of GaN Metal Semiconductor Field-Effect Transistor at High Temperature

Seikoh Yoshida and Joe Suzuki

(Received February 17, 1998; accepted for publication March 19, 1998)

We have grown a high quality GaN for fabricating a metal semiconductor field effect transistor (MESFET) using gas-source molecular beam epitaxy (GSMBE). A GaN MESFET for high temperature operation was developed. We used Au/Pt as a Schottky gate, and Au/Ti/Al as a source-drain. The endurance of high temperatures by GaN MESFET was investigated. It was confirmed for the first time, that the FET performance was satisfactory even after the FET was heated at 400°C for over 700 h, thereby demonstrating, for the first time, the reliability of GaN MESFET. The device continued to be operative even when, heated further up to 600°C.

URL: http://jjap.jsap.jp/link?JJAP/37/L482/
DOI: 10.1143/JJAP.37.L482

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