Jpn. J. Appl. Phys. 37 (1998) pp. L774-L777  |Next Article|  |Table of Contents|
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Deposition of Hydrogenated Amorphous Silicon under Intermittent Substrate Bias

Nobuki Sakikawa, Yoshinori Shishida, Seiichi Miyazaki and Masataka Hirose

(Received March 23, 1998; accepted for publication May 7, 1998)

Hydrogenated amorphous silicon (a-Si:H) was deposited using a triode-type reactor to which an intermittent substrate bias was applied. The total bonded hydrogen content was reduced to 2.9 at.% at a substrate temperature of 200°C, and a photosensitivity of 5×10⁶ with a dark conductivity of 7×10^-11 S/cm was obtained. The defect density measured using a constant photocurrent method was as low as 8.5×10¹⁵ cm^-3. It is suggested that the ion flux intermittently impinging onto the growing film surface causes ion-induced hydrogen desorption and a-Si:H network relaxation.

URL: http://jjap.jsap.jp/link?JJAP/37/L774/
DOI: 10.1143/JJAP.37.L774

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